Standard

A method for fabricating the ordered arrays of silicon nanopillars. / Basalaeva, L. S.; Nastaushev, Yu V.; Dultsev, F. N.

в: Materials Today: Proceedings, Том 4, № 11, 01.01.2017, стр. 11341-11345.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Basalaeva, LS, Nastaushev, YV & Dultsev, FN 2017, 'A method for fabricating the ordered arrays of silicon nanopillars', Materials Today: Proceedings, Том. 4, № 11, стр. 11341-11345. https://doi.org/10.1016/j.matpr.2017.09.005

APA

Basalaeva, L. S., Nastaushev, Y. V., & Dultsev, F. N. (2017). A method for fabricating the ordered arrays of silicon nanopillars. Materials Today: Proceedings, 4(11), 11341-11345. https://doi.org/10.1016/j.matpr.2017.09.005

Vancouver

Basalaeva LS, Nastaushev YV, Dultsev FN. A method for fabricating the ordered arrays of silicon nanopillars. Materials Today: Proceedings. 2017 янв. 1;4(11):11341-11345. doi: 10.1016/j.matpr.2017.09.005

Author

Basalaeva, L. S. ; Nastaushev, Yu V. ; Dultsev, F. N. / A method for fabricating the ordered arrays of silicon nanopillars. в: Materials Today: Proceedings. 2017 ; Том 4, № 11. стр. 11341-11345.

BibTeX

@article{2c995ddd11324bd2b0a5855d95aa935d,
title = "A method for fabricating the ordered arrays of silicon nanopillars",
abstract = "In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.",
keywords = "Nanolithography, Plasma etching, Silicon nanopillars, nanolithography, silicon nanopillars, NANOWIRES, plasma etching",
author = "Basalaeva, {L. S.} and Nastaushev, {Yu V.} and Dultsev, {F. N.}",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/j.matpr.2017.09.005",
language = "English",
volume = "4",
pages = "11341--11345",
journal = "Materials Today: Proceedings",
issn = "2214-7853",
publisher = "Elsevier Science B.V.",
number = "11",

}

RIS

TY - JOUR

T1 - A method for fabricating the ordered arrays of silicon nanopillars

AU - Basalaeva, L. S.

AU - Nastaushev, Yu V.

AU - Dultsev, F. N.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.

AB - In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.

KW - Nanolithography

KW - Plasma etching

KW - Silicon nanopillars

KW - nanolithography

KW - silicon nanopillars

KW - NANOWIRES

KW - plasma etching

UR - http://www.scopus.com/inward/record.url?scp=85032027818&partnerID=8YFLogxK

U2 - 10.1016/j.matpr.2017.09.005

DO - 10.1016/j.matpr.2017.09.005

M3 - Article

AN - SCOPUS:85032027818

VL - 4

SP - 11341

EP - 11345

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

SN - 2214-7853

IS - 11

ER -

ID: 9874854