Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
VO2Nanocrystals Array for Low-Power Resistive Switches. / Kapoguzov, Kirill E.; Mutilin, Sergey V.; Kichay, Vadim N. et al.
Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, 2022. p. 37-41 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2022-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - VO2Nanocrystals Array for Low-Power Resistive Switches
AU - Kapoguzov, Kirill E.
AU - Mutilin, Sergey V.
AU - Kichay, Vadim N.
AU - Yakovkina, Lyubov V.
AU - Voloshin, Bogdan V.
AU - Seleznev, Vladimir A.
N1 - Funding Information: Russian Science Foundation (Grant No. 21-19-00873). Publisher Copyright: © 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - At the moment, new concepts of memory and neuromorphic computing devices are developing rapidly based on the semiconductor-metal phase transition effect in some metal oxides, such as vanadium dioxide (VO2). The resistive switching in VO2 can be achieved by applying a voltage or current that induces Joule heating in the device and triggers the semiconductor-metal transition. However, the structural phase transition in VO2, accompanied by a sharp change in the lattice constant, seriously limits the use of polycrystalline films in switching devices. This paper reports on the fabrication of low-power vertical two-contact resistive switches based on disordered array of high-quality VO2 nanocrystals. Unlike a polycrystalline film, an array of single nanocrystals can reduce the threshold switching power by three orders of magnitude and achieve a high stability and durability due to the small contact area of the nanocrystals with the substrate. Minimal values of threshold voltage of 0.4 V and threshold power of 13 µ W were reached. The proposed design of switches combines formation simplicity, comparable to polycrystalline films based switches, and significantly reduces the threshold power. Our fabrication approach of energy-efficient devices can be applied for a number of new semiconductor-metal phase transition based applications for nanoelectronics and nanophotonics.
AB - At the moment, new concepts of memory and neuromorphic computing devices are developing rapidly based on the semiconductor-metal phase transition effect in some metal oxides, such as vanadium dioxide (VO2). The resistive switching in VO2 can be achieved by applying a voltage or current that induces Joule heating in the device and triggers the semiconductor-metal transition. However, the structural phase transition in VO2, accompanied by a sharp change in the lattice constant, seriously limits the use of polycrystalline films in switching devices. This paper reports on the fabrication of low-power vertical two-contact resistive switches based on disordered array of high-quality VO2 nanocrystals. Unlike a polycrystalline film, an array of single nanocrystals can reduce the threshold switching power by three orders of magnitude and achieve a high stability and durability due to the small contact area of the nanocrystals with the substrate. Minimal values of threshold voltage of 0.4 V and threshold power of 13 µ W were reached. The proposed design of switches combines formation simplicity, comparable to polycrystalline films based switches, and significantly reduces the threshold power. Our fabrication approach of energy-efficient devices can be applied for a number of new semiconductor-metal phase transition based applications for nanoelectronics and nanophotonics.
KW - atomic layer deposition
KW - chemical vapor deposition
KW - resistive switches
KW - semiconductor-metal phase transition
KW - Vanadium dioxide
UR - http://www.scopus.com/inward/record.url?scp=85137369078&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/b6de892c-7c2a-335f-a2c9-0131f15491cd/
U2 - 10.1109/EDM55285.2022.9855088
DO - 10.1109/EDM55285.2022.9855088
M3 - Conference contribution
AN - SCOPUS:85137369078
SN - 9781665498043
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 37
EP - 41
BT - Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
PB - IEEE Computer Society
T2 - 23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Y2 - 30 June 2022 through 4 July 2022
ER -
ID: 37124557