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Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures. / Volodin, V. A.; Timofeev, V. A.; Nikiforov, A. I. et al.

In: JETP Letters, Vol. 109, No. 6, 01.03.2019, p. 368-371.

Research output: Contribution to journal › Article › peer-review

Harvard

Volodin, VA, Timofeev, VA, Nikiforov, AI, Stoffel, M, Rinnert, H & Vergnat, M 2019, 'Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures', JETP Letters, vol. 109, no. 6, pp. 368-371. https://doi.org/10.1134/S0021364019060158

APA

Volodin, V. A., Timofeev, V. A., Nikiforov, A. I., Stoffel, M., Rinnert, H., & Vergnat, M. (2019). Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures. JETP Letters, 109(6), 368-371. https://doi.org/10.1134/S0021364019060158

Vancouver

Volodin VA, Timofeev VA, Nikiforov AI, Stoffel M, Rinnert H, Vergnat M. Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures. JETP Letters. 2019 Mar 1;109(6):368-371. doi: 10.1134/S0021364019060158

Author

Volodin, V. A. ; Timofeev, V. A. ; Nikiforov, A. I. et al. / Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures. In: JETP Letters. 2019 ; Vol. 109, No. 6. pp. 368-371.

BibTeX

@article{b46e0993082e4248a77dba719f3c027d,
title = "Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures",
abstract = "Multilayer heterostructures Si/Si1−xSnx grown by molecular beam epitaxy on Si (001) substrates have been studied by Raman and photoluminescence spectroscopy. Raman spectra exhibit peaks corresponding to the vibrations of Si-Sn and Sn-Sn bonds; the vibrations of Sn-Sn bonds imply the presence of tin nanocrystals in heterostructures. Two photoluminescence bands at 0.75 eV (1650 nm) and 0.65 eV (1900 nm) have been observed in heterostructures at low temperatures. The former band can be attributed to optical transitions in quantum wells in the type II heterostructure Si/Si1−xSnx. The latter band can be associated with excitons localized in tin nanocrystals.",
author = "Volodin, {V. A.} and Timofeev, {V. A.} and Nikiforov, {A. I.} and M. Stoffel and H. Rinnert and M. Vergnat",
year = "2019",
month = mar,
day = "1",
doi = "10.1134/S0021364019060158",
language = "English",
volume = "109",
pages = "368--371",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "6",

}

RIS

TY - JOUR

T1 - Vibrational and Light-Emitting Properties of Si/Si1−xSn x Heterostructures

AU - Volodin, V. A.

AU - Timofeev, V. A.

AU - Nikiforov, A. I.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Multilayer heterostructures Si/Si1−xSnx grown by molecular beam epitaxy on Si (001) substrates have been studied by Raman and photoluminescence spectroscopy. Raman spectra exhibit peaks corresponding to the vibrations of Si-Sn and Sn-Sn bonds; the vibrations of Sn-Sn bonds imply the presence of tin nanocrystals in heterostructures. Two photoluminescence bands at 0.75 eV (1650 nm) and 0.65 eV (1900 nm) have been observed in heterostructures at low temperatures. The former band can be attributed to optical transitions in quantum wells in the type II heterostructure Si/Si1−xSnx. The latter band can be associated with excitons localized in tin nanocrystals.

AB - Multilayer heterostructures Si/Si1−xSnx grown by molecular beam epitaxy on Si (001) substrates have been studied by Raman and photoluminescence spectroscopy. Raman spectra exhibit peaks corresponding to the vibrations of Si-Sn and Sn-Sn bonds; the vibrations of Sn-Sn bonds imply the presence of tin nanocrystals in heterostructures. Two photoluminescence bands at 0.75 eV (1650 nm) and 0.65 eV (1900 nm) have been observed in heterostructures at low temperatures. The former band can be attributed to optical transitions in quantum wells in the type II heterostructure Si/Si1−xSnx. The latter band can be associated with excitons localized in tin nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=85066311146&partnerID=8YFLogxK

U2 - 10.1134/S0021364019060158

DO - 10.1134/S0021364019060158

M3 - Article

AN - SCOPUS:85066311146

VL - 109

SP - 368

EP - 371

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 6

ER -

ID: 20347439