Standard

Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica. / Kokh, K. A.; Nebogatikova, N. A.; Antonova, I. V. et al.

In: Materials Research Bulletin, Vol. 129, 110906, 09.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Kokh, KA, Nebogatikova, NA, Antonova, IV, Kustov, DA, Golyashov, VA, Goldyreva, ES, Stepina, NP, Kirienko, VV & Tereshchenko, OE 2020, 'Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica', Materials Research Bulletin, vol. 129, 110906. https://doi.org/10.1016/j.materresbull.2020.110906

APA

Kokh, K. A., Nebogatikova, N. A., Antonova, I. V., Kustov, D. A., Golyashov, V. A., Goldyreva, E. S., Stepina, N. P., Kirienko, V. V., & Tereshchenko, O. E. (2020). Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica. Materials Research Bulletin, 129, [110906]. https://doi.org/10.1016/j.materresbull.2020.110906

Vancouver

Kokh KA, Nebogatikova NA, Antonova IV, Kustov DA, Golyashov VA, Goldyreva ES et al. Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica. Materials Research Bulletin. 2020 Sept;129:110906. doi: 10.1016/j.materresbull.2020.110906

Author

Kokh, K. A. ; Nebogatikova, N. A. ; Antonova, I. V. et al. / Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica. In: Materials Research Bulletin. 2020 ; Vol. 129.

BibTeX

@article{2e721b2e22aa4ac1839fafc7eb8612fe,
title = "Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica",
abstract = "Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.",
keywords = "Bismuth selenide, Electrical properties, Epitaxy, Mica, Microstructure, Physical vapor deposition, SB2TE3, RAMAN, BI2TE3, TOPOLOGICAL INSULATOR, QUANTUM OSCILLATIONS, SURFACE, THICKNESS",
author = "Kokh, {K. A.} and Nebogatikova, {N. A.} and Antonova, {I. V.} and Kustov, {D. A.} and Golyashov, {V. A.} and Goldyreva, {E. S.} and Stepina, {N. P.} and Kirienko, {V. V.} and Tereshchenko, {O. E.}",
year = "2020",
month = sep,
doi = "10.1016/j.materresbull.2020.110906",
language = "English",
volume = "129",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica

AU - Kokh, K. A.

AU - Nebogatikova, N. A.

AU - Antonova, I. V.

AU - Kustov, D. A.

AU - Golyashov, V. A.

AU - Goldyreva, E. S.

AU - Stepina, N. P.

AU - Kirienko, V. V.

AU - Tereshchenko, O. E.

PY - 2020/9

Y1 - 2020/9

N2 - Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.

AB - Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.

KW - Bismuth selenide

KW - Electrical properties

KW - Epitaxy

KW - Mica

KW - Microstructure

KW - Physical vapor deposition

KW - SB2TE3

KW - RAMAN

KW - BI2TE3

KW - TOPOLOGICAL INSULATOR

KW - QUANTUM OSCILLATIONS

KW - SURFACE

KW - THICKNESS

UR - http://www.scopus.com/inward/record.url?scp=85083812184&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2020.110906

DO - 10.1016/j.materresbull.2020.110906

M3 - Article

AN - SCOPUS:85083812184

VL - 129

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

M1 - 110906

ER -

ID: 24074995