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Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates. / Abramkin, D. S.; Shamirzaev, T. S.

In: Semiconductors, Vol. 53, No. 5, 01.05.2019, p. 703-710.

Research output: Contribution to journal › Article › peer-review

Harvard

Abramkin, DS & Shamirzaev, TS 2019, 'Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates', Semiconductors, vol. 53, no. 5, pp. 703-710. https://doi.org/10.1134/S1063782619050026

APA

Abramkin, D. S., & Shamirzaev, T. S. (2019). Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates. Semiconductors, 53(5), 703-710. https://doi.org/10.1134/S1063782619050026

Vancouver

Abramkin DS, Shamirzaev TS. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates. Semiconductors. 2019 May 1;53(5):703-710. doi: 10.1134/S1063782619050026

Author

Abramkin, D. S. ; Shamirzaev, T. S. / Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates. In: Semiconductors. 2019 ; Vol. 53, No. 5. pp. 703-710.

BibTeX

@article{b1902f3ccf234e498dc168354b182eb6,
title = "Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates",
abstract = "Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III-V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.",
keywords = "QUANTUM DOTS, DEFORMATION POTENTIALS, V SEMICONDUCTORS, SPIN DYNAMICS, INSB/ALAS, EXCITON, GAAS",
author = "Abramkin, {D. S.} and Shamirzaev, {T. S.}",
year = "2019",
month = may,
day = "1",
doi = "10.1134/S1063782619050026",
language = "English",
volume = "53",
pages = "703--710",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

AU - Abramkin, D. S.

AU - Shamirzaev, T. S.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III-V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.

AB - Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III-V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.

KW - QUANTUM DOTS

KW - DEFORMATION POTENTIALS

KW - V SEMICONDUCTORS

KW - SPIN DYNAMICS

KW - INSB/ALAS

KW - EXCITON

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85066128017&partnerID=8YFLogxK

U2 - 10.1134/S1063782619050026

DO - 10.1134/S1063782619050026

M3 - Article

AN - SCOPUS:85066128017

VL - 53

SP - 703

EP - 710

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 20159963