The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors › Research Explorer

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The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1016/j.sse.2016.12.013
Final published version

D. Yu Protasov
K. S. Zhuravlev

Original language	English
Pages (from-to)	66-72
Number of pages	7
Journal	Solid-State Electronics
Volume	129
DOIs	https://doi.org/10.1016/j.sse.2016.12.013
Publication status	Published - 1 Mar 2017

OECD FOS+WOS

Research areas

Ionized donors and acceptors, pHEMT, Scattering mechanisms, δ-layers broadening, delta-layers broadening, TRANSPORT, SI, POWER, DOPING PROFILES, SCATTERING, ALXGA1-XAS/GAAS, LAYERS

ID: 9562011