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The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface. / Aksenov, M. S.; Valisheva, N. A.; Kovchavtsev, A. P.

In: Technical Physics Letters, Vol. 47, No. 6, 06.2021, p. 478-481.

Research output: Contribution to journal › Article › peer-review

Harvard

Aksenov, MS, Valisheva, NA & Kovchavtsev, AP 2021, 'The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface', Technical Physics Letters, vol. 47, no. 6, pp. 478-481. https://doi.org/10.1134/S1063785021050175

APA

Aksenov, M. S., Valisheva, N. A., & Kovchavtsev, A. P. (2021). The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface. Technical Physics Letters, 47(6), 478-481. https://doi.org/10.1134/S1063785021050175

Vancouver

Aksenov MS, Valisheva NA, Kovchavtsev AP. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface. Technical Physics Letters. 2021 Jun;47(6):478-481. doi: 10.1134/S1063785021050175

Author

Aksenov, M. S. ; Valisheva, N. A. ; Kovchavtsev, A. P. / The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface. In: Technical Physics Letters. 2021 ; Vol. 47, No. 6. pp. 478-481.

BibTeX

@article{80fb04ada6614102838259ac3a6d25c7,
title = "The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface",
abstract = "It is shown that the fluorine-containing anodic layers at the n-In0.53Ga0.47As surface, in contrast to the fluorine-free anodic layers, form a SiO2/InGaAs interface with the unpinned Fermi level, where the density of states decreases upon annealing at a temperature of 300°C to (2–4) × 1011 and (4–5) × 1012 eV–1 cm–2 near the bottom of the conduction band and the center of the band gap, respectively. An increase in the annealing temperature leads to a reverse increase in the density of states (350°C) and pinning of the Fermi level (400°C).",
keywords = "anodic oxide, C–V characteristics, density of interface states, fluorine, InGaAs, In0.53Ga0.47As",
author = "Aksenov, {M. S.} and Valisheva, {N. A.} and Kovchavtsev, {A. P.}",
note = "Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 20-02-00516. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = jun,
doi = "10.1134/S1063785021050175",
language = "English",
volume = "47",
pages = "478--481",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Kovchavtsev, A. P.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 20-02-00516. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/6

Y1 - 2021/6

N2 - It is shown that the fluorine-containing anodic layers at the n-In0.53Ga0.47As surface, in contrast to the fluorine-free anodic layers, form a SiO2/InGaAs interface with the unpinned Fermi level, where the density of states decreases upon annealing at a temperature of 300°C to (2–4) × 1011 and (4–5) × 1012 eV–1 cm–2 near the bottom of the conduction band and the center of the band gap, respectively. An increase in the annealing temperature leads to a reverse increase in the density of states (350°C) and pinning of the Fermi level (400°C).

AB - It is shown that the fluorine-containing anodic layers at the n-In0.53Ga0.47As surface, in contrast to the fluorine-free anodic layers, form a SiO2/InGaAs interface with the unpinned Fermi level, where the density of states decreases upon annealing at a temperature of 300°C to (2–4) × 1011 and (4–5) × 1012 eV–1 cm–2 near the bottom of the conduction band and the center of the band gap, respectively. An increase in the annealing temperature leads to a reverse increase in the density of states (350°C) and pinning of the Fermi level (400°C).

KW - anodic oxide

KW - C–V characteristics

KW - density of interface states

KW - fluorine

KW - InGaAs

KW - In0.53Ga0.47As

UR - http://www.scopus.com/inward/record.url?scp=85121382857&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47543896

UR - https://www.mendeley.com/catalogue/31f69ef0-fcdc-3977-ab9f-75da65a6035c/

U2 - 10.1134/S1063785021050175

DO - 10.1134/S1063785021050175

M3 - Article

AN - SCOPUS:85121382857

VL - 47

SP - 478

EP - 481

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -

ID: 35260499