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THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON. / Stuchlik, Jiri; Volodin, Vladimir A.; Shklyaev, Alexander A. et al.

8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD, 2017. p. 133-137.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Stuchlik, J, Volodin, VA, Shklyaev, AA, Stuchlikova, TH, Ledinsky, M, Cermak, J, Kupcik, J, Fajgar, R, Mortet, V, More-Chevalier, J, Ashcheulov, P, Purkrt, A & Remes, Z 2017, THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON. in 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD, pp. 133-137, 8th International Conference on Nanomaterials - Research and Application (NANOCON), Brno, Czech Republic, 19.10.2016.

APA

Stuchlik, J., Volodin, V. A., Shklyaev, A. A., Stuchlikova, T. H., Ledinsky, M., Cermak, J., Kupcik, J., Fajgar, R., Mortet, V., More-Chevalier, J., Ashcheulov, P., Purkrt, A., & Remes, Z. (2017). THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON. In 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016) (pp. 133-137). TANGER LTD.

Vancouver

Stuchlik J, Volodin VA, Shklyaev AA, Stuchlikova TH, Ledinsky M, Cermak J et al. THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON. In 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD. 2017. p. 133-137

Author

Stuchlik, Jiri ; Volodin, Vladimir A. ; Shklyaev, Alexander A. et al. / THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON. 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD, 2017. pp. 133-137

BibTeX

@inproceedings{b185ee7e1cbc4c8083922b140825d686,
title = "THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON",
abstract = "We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.",
keywords = "Ge nanoparticles, a-Si:H, PECVD, MBE, NANOCRYSTALLINE THIN-FILMS, DIFFRACTION BASED ANALYSIS, PHASE FRACTIONS, TEXTURE",
author = "Jiri Stuchlik and Volodin, {Vladimir A.} and Shklyaev, {Alexander A.} and Stuchlikova, {The Ha} and Martin Ledinsky and Jan Cermak and Jaroslav Kupcik and Radek Fajgar and Vincent Mortet and Joris More-Chevalier and Petr Ashcheulov and Adam Purkrt and Zdenek Remes",
year = "2017",
language = "English",
pages = "133--137",
booktitle = "8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016)",
publisher = "TANGER LTD",
note = "8th International Conference on Nanomaterials - Research and Application (NANOCON) ; Conference date: 19-10-2016 Through 21-10-2016",

}

RIS

TY - GEN

T1 - THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

AU - Stuchlik, Jiri

AU - Volodin, Vladimir A.

AU - Shklyaev, Alexander A.

AU - Stuchlikova, The Ha

AU - Ledinsky, Martin

AU - Cermak, Jan

AU - Kupcik, Jaroslav

AU - Fajgar, Radek

AU - Mortet, Vincent

AU - More-Chevalier, Joris

AU - Ashcheulov, Petr

AU - Purkrt, Adam

AU - Remes, Zdenek

PY - 2017

Y1 - 2017

N2 - We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

AB - We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

KW - Ge nanoparticles

KW - a-Si:H

KW - PECVD

KW - MBE

KW - NANOCRYSTALLINE THIN-FILMS

KW - DIFFRACTION BASED ANALYSIS

KW - PHASE FRACTIONS

KW - TEXTURE

M3 - Conference contribution

SP - 133

EP - 137

BT - 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016)

PB - TANGER LTD

T2 - 8th International Conference on Nanomaterials - Research and Application (NANOCON)

Y2 - 19 October 2016 through 21 October 2016

ER -

ID: 18739490