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The charge trap density evolution in wake-up and fatigue modes of FRAM. / Islamov, Damir R.; Orlov, O. M.; Gritsenko, V. A. et al.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. ed. / D Misra; S DeGendt; M Houssa; K Kita; D Landheer. Vol. 80 1. ed. Electrochemical Society, Inc., 2017. p. 279-281 (ECS Transactions; Vol. 80).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Harvard
Islamov, DR, Orlov, OM, Gritsenko, VA & Krasnikov, GJ 2017,
The charge trap density evolution in wake-up and fatigue modes of FRAM. in D Misra, S DeGendt, M Houssa, K Kita & D Landheer (eds),
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 edn, vol. 80, ECS Transactions, vol. 80, Electrochemical Society, Inc., pp. 279-281, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, National Harbor, United States,
01.10.2017.
https://doi.org/10.1149/08001.0279ecst
APA
Islamov, D. R., Orlov, O. M., Gritsenko, V. A., & Krasnikov, G. J. (2017).
The charge trap density evolution in wake-up and fatigue modes of FRAM. In D. Misra, S. DeGendt, M. Houssa, K. Kita, & D. Landheer (Eds.),
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR (1 ed., Vol. 80, pp. 279-281). (ECS Transactions; Vol. 80). Electrochemical Society, Inc..
https://doi.org/10.1149/08001.0279ecst
Vancouver
Islamov DR, Orlov OM, Gritsenko VA, Krasnikov GJ.
The charge trap density evolution in wake-up and fatigue modes of FRAM. In Misra D, DeGendt S, Houssa M, Kita K, Landheer D, editors, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 ed. Vol. 80. Electrochemical Society, Inc. 2017. p. 279-281. (ECS Transactions). doi: 10.1149/08001.0279ecst
Author
BibTeX
@inproceedings{1d9ec3fc711d484da3a31259f2038ae7,
title = "The charge trap density evolution in wake-up and fatigue modes of FRAM",
abstract = "We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.",
keywords = "THIN-FILMS, FERROELECTRICITY, HF0.5ZR0.5O2, TRANSPORT",
author = "Islamov, {Damir R.} and Orlov, {O. M.} and Gritsenko, {V. A.} and Krasnikov, {G. Ja}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = jan,
day = "1",
doi = "10.1149/08001.0279ecst",
language = "English",
isbn = "978-1-62332-470-4",
volume = "80",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "279--281",
editor = "D Misra and S DeGendt and M Houssa and K Kita and D Landheer",
booktitle = "SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR",
address = "United States",
edition = "1",
}
RIS
TY - GEN
T1 - The charge trap density evolution in wake-up and fatigue modes of FRAM
AU - Islamov, Damir R.
AU - Orlov, O. M.
AU - Gritsenko, V. A.
AU - Krasnikov, G. Ja
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.
AB - We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.
KW - THIN-FILMS
KW - FERROELECTRICITY
KW - HF0.5ZR0.5O2
KW - TRANSPORT
UR - http://www.scopus.com/inward/record.url?scp=85050028959&partnerID=8YFLogxK
U2 - 10.1149/08001.0279ecst
DO - 10.1149/08001.0279ecst
M3 - Conference contribution
AN - SCOPUS:85050028959
SN - 978-1-62332-470-4
VL - 80
T3 - ECS Transactions
SP - 279
EP - 281
BT - SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
A2 - Misra, D
A2 - DeGendt, S
A2 - Houssa, M
A2 - Kita, K
A2 - Landheer, D
PB - Electrochemical Society, Inc.
T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Y2 - 1 October 2017 through 5 October 2017
ER -
