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The charge trap density evolution in wake-up and fatigue modes of FRAM. / Islamov, Damir R.; Orlov, O. M.; Gritsenko, V. A. et al.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. ed. / D Misra; S DeGendt; M Houssa; K Kita; D Landheer. Vol. 80 1. ed. Electrochemical Society, Inc., 2017. p. 279-281 (ECS Transactions; Vol. 80).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Harvard

Islamov, DR, Orlov, OM, Gritsenko, VA & Krasnikov, GJ 2017, The charge trap density evolution in wake-up and fatigue modes of FRAM. in D Misra, S DeGendt, M Houssa, K Kita & D Landheer (eds), SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 edn, vol. 80, ECS Transactions, vol. 80, Electrochemical Society, Inc., pp. 279-281, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, National Harbor, United States, 01.10.2017. https://doi.org/10.1149/08001.0279ecst

APA

Islamov, D. R., Orlov, O. M., Gritsenko, V. A., & Krasnikov, G. J. (2017). The charge trap density evolution in wake-up and fatigue modes of FRAM. In D. Misra, S. DeGendt, M. Houssa, K. Kita, & D. Landheer (Eds.), SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR (1 ed., Vol. 80, pp. 279-281). (ECS Transactions; Vol. 80). Electrochemical Society, Inc.. https://doi.org/10.1149/08001.0279ecst

Vancouver

Islamov DR, Orlov OM, Gritsenko VA, Krasnikov GJ. The charge trap density evolution in wake-up and fatigue modes of FRAM. In Misra D, DeGendt S, Houssa M, Kita K, Landheer D, editors, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 ed. Vol. 80. Electrochemical Society, Inc. 2017. p. 279-281. (ECS Transactions). doi: 10.1149/08001.0279ecst

Author

Islamov, Damir R. ; Orlov, O. M. ; Gritsenko, V. A. et al. / The charge trap density evolution in wake-up and fatigue modes of FRAM. SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. editor / D Misra ; S DeGendt ; M Houssa ; K Kita ; D Landheer. Vol. 80 1. ed. Electrochemical Society, Inc., 2017. pp. 279-281 (ECS Transactions).

BibTeX

@inproceedings{1d9ec3fc711d484da3a31259f2038ae7,
title = "The charge trap density evolution in wake-up and fatigue modes of FRAM",
abstract = "We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.",
keywords = "THIN-FILMS, FERROELECTRICITY, HF0.5ZR0.5O2, TRANSPORT",
author = "Islamov, {Damir R.} and Orlov, {O. M.} and Gritsenko, {V. A.} and Krasnikov, {G. Ja}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = jan,
day = "1",
doi = "10.1149/08001.0279ecst",
language = "English",
isbn = "978-1-62332-470-4",
volume = "80",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "279--281",
editor = "D Misra and S DeGendt and M Houssa and K Kita and D Landheer",
booktitle = "SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR",
address = "United States",
edition = "1",

}

RIS

TY - GEN

T1 - The charge trap density evolution in wake-up and fatigue modes of FRAM

AU - Islamov, Damir R.

AU - Orlov, O. M.

AU - Gritsenko, V. A.

AU - Krasnikov, G. Ja

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.

AB - We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.

KW - THIN-FILMS

KW - FERROELECTRICITY

KW - HF0.5ZR0.5O2

KW - TRANSPORT

UR - http://www.scopus.com/inward/record.url?scp=85050028959&partnerID=8YFLogxK

U2 - 10.1149/08001.0279ecst

DO - 10.1149/08001.0279ecst

M3 - Conference contribution

AN - SCOPUS:85050028959

SN - 978-1-62332-470-4

VL - 80

T3 - ECS Transactions

SP - 279

EP - 281

BT - SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR

A2 - Misra, D

A2 - DeGendt, S

A2 - Houssa, M

A2 - Kita, K

A2 - Landheer, D

PB - Electrochemical Society, Inc.

T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

ID: 14864421