TY - JOUR

T1 - The charge transport mechanism in amorphous boron nitride

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

PY - 2020/9/15

Y1 - 2020/9/15

N2 - The charge transport mechanism in thick film (~ 100 nm) amorphous boron nitride (a-BN) was studied experimentally and theoretically. Applying the experiments on the injection of minor carriers of n- and p-type silicon, the contribution of electrons and holes to the a-BN conductivity in the Si/BN/Al structure was determined. It was established that electrons and holes contribute to the a-BN conductivity, i.e. the a-BN conductivity is two-band. In a broad range of electric fields and temperatures, the charge transport in a-BN is satisfactorily described in the framework of the multiphonon trap ionization theory with thermal WT = 1.0 eV and optical Wopt = 2.0 eV trap ionization energies, respectively.

AB - The charge transport mechanism in thick film (~ 100 nm) amorphous boron nitride (a-BN) was studied experimentally and theoretically. Applying the experiments on the injection of minor carriers of n- and p-type silicon, the contribution of electrons and holes to the a-BN conductivity in the Si/BN/Al structure was determined. It was established that electrons and holes contribute to the a-BN conductivity, i.e. the a-BN conductivity is two-band. In a broad range of electric fields and temperatures, the charge transport in a-BN is satisfactorily described in the framework of the multiphonon trap ionization theory with thermal WT = 1.0 eV and optical Wopt = 2.0 eV trap ionization energies, respectively.

KW - Amorphous

KW - BN

KW - Boron nitride

KW - Current-voltage characteristics

KW - Leakage current

KW - Phonon-assisted trap ionization

UR - http://www.scopus.com/inward/record.url?scp=85086314002&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2020.120213

DO - 10.1016/j.jnoncrysol.2020.120213

M3 - Article

AN - SCOPUS:85086314002

VL - 544

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 120213

ER -