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Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film. / Savchenko, M. L.; Otteneder, M.; Dmitriev, I. A. et al.

In: Applied Physics Letters, Vol. 117, No. 20, 201103, 16.11.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Savchenko, ML, Otteneder, M, Dmitriev, IA, Mikhailov, NN, Kvon, ZD & Ganichev, SD 2020, 'Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film', Applied Physics Letters, vol. 117, no. 20, 201103. https://doi.org/10.1063/5.0025745

APA

Savchenko, M. L., Otteneder, M., Dmitriev, I. A., Mikhailov, N. N., Kvon, Z. D., & Ganichev, S. D. (2020). Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film. Applied Physics Letters, 117(20), [201103]. https://doi.org/10.1063/5.0025745

Vancouver

Savchenko ML, Otteneder M, Dmitriev IA, Mikhailov NN, Kvon ZD, Ganichev SD. Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film. Applied Physics Letters. 2020 Nov 16;117(20):201103. doi: 10.1063/5.0025745

Author

Savchenko, M. L. ; Otteneder, M. ; Dmitriev, I. A. et al. / Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film. In: Applied Physics Letters. 2020 ; Vol. 117, No. 20.

BibTeX

@article{c3487519b624409093c9334e38b4d2fa,
title = "Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film",
abstract = "We report on a detailed study of terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: Inside the conduction and valence bands and in the bulk gap. In the presence of a magnetic field, we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DFs) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DFs and bulk electrons. At high electron densities, we observe THz radiation-induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of a 2D electron system formed by helical surface states in strained HgTe films.",
author = "Savchenko, {M. L.} and M. Otteneder and Dmitriev, {I. A.} and Mikhailov, {N. N.} and Kvon, {Z. D.} and Ganichev, {S. D.}",
note = "Funding Information: We are grateful to Dima Kozlov for discussions. The Novosibirsk team acknowledges the financial support from the Russian Science Foundation (Grant No. 16-12-10041-P). The Regensburg team gratefully acknowledges the support of the Deutsche Forschungsgemeinschaft (DFG)-Project-ID 314695032-SFB 1277 and the Volkswagen Stiftung Program (No. 97738). S.D.G. also thanks the IRAP of the Foundation for Polish Science (Grant No. MAB/2018/9, CENTERA) for the support. Publisher Copyright: {\textcopyright} 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = nov,
day = "16",
doi = "10.1063/5.0025745",
language = "English",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "20",

}

RIS

TY - JOUR

T1 - Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film

AU - Savchenko, M. L.

AU - Otteneder, M.

AU - Dmitriev, I. A.

AU - Mikhailov, N. N.

AU - Kvon, Z. D.

AU - Ganichev, S. D.

N1 - Funding Information: We are grateful to Dima Kozlov for discussions. The Novosibirsk team acknowledges the financial support from the Russian Science Foundation (Grant No. 16-12-10041-P). The Regensburg team gratefully acknowledges the support of the Deutsche Forschungsgemeinschaft (DFG)-Project-ID 314695032-SFB 1277 and the Volkswagen Stiftung Program (No. 97738). S.D.G. also thanks the IRAP of the Foundation for Polish Science (Grant No. MAB/2018/9, CENTERA) for the support. Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/11/16

Y1 - 2020/11/16

N2 - We report on a detailed study of terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: Inside the conduction and valence bands and in the bulk gap. In the presence of a magnetic field, we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DFs) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DFs and bulk electrons. At high electron densities, we observe THz radiation-induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of a 2D electron system formed by helical surface states in strained HgTe films.

AB - We report on a detailed study of terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: Inside the conduction and valence bands and in the bulk gap. In the presence of a magnetic field, we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DFs) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DFs and bulk electrons. At high electron densities, we observe THz radiation-induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of a 2D electron system formed by helical surface states in strained HgTe films.

UR - http://www.scopus.com/inward/record.url?scp=85096691354&partnerID=8YFLogxK

U2 - 10.1063/5.0025745

DO - 10.1063/5.0025745

M3 - Article

AN - SCOPUS:85096691354

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201103

ER -

ID: 26140883