Standard

Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix. / Zinovyev, V. A.; Zinovieva, A. F.; Volodin, V. A. et al.

In: JETP Letters, Vol. 116, No. 9, 11.2022, p. 628-633.

Research output: Contribution to journal › Article › peer-review

Harvard

Zinovyev, VA, Zinovieva, AF, Volodin, VA, Gutakovskii, AK, Deryabin, AS, Krupin, AY, Kulik, LV, Zhivulko, VD, Mudryi, AV & Dvurechenskii, AV 2022, 'Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix', JETP Letters, vol. 116, no. 9, pp. 628-633. https://doi.org/10.1134/S0021364022602159

APA

Zinovyev, V. A., Zinovieva, A. F., Volodin, V. A., Gutakovskii, A. K., Deryabin, A. S., Krupin, A. Y., Kulik, L. V., Zhivulko, V. D., Mudryi, A. V., & Dvurechenskii, A. V. (2022). Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix. JETP Letters, 116(9), 628-633. https://doi.org/10.1134/S0021364022602159

Vancouver

Zinovyev VA, Zinovieva AF, Volodin VA, Gutakovskii AK, Deryabin AS, Krupin AY et al. Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix. JETP Letters. 2022 Nov;116(9):628-633. doi: 10.1134/S0021364022602159

Author

Zinovyev, V. A. ; Zinovieva, A. F. ; Volodin, V. A. et al. / Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix. In: JETP Letters. 2022 ; Vol. 116, No. 9. pp. 628-633.

BibTeX

@article{701db87e40be400697f29d2e0a769aaf,
title = "Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix",
abstract = "The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and electron paramagnetic resonance (EPR) studies have shown that regions of two-dimensional Si layers are formed in epitaxial structures prepared by the deposition of one to three biatomic Si layers on the CaF2/Si(111) film surface at a temperature of 550°С. The Raman spectra of these structures exhibit a narrow peak at 418 cm–1, which is due to light scattering on vibrations of Si atoms in the plane of a two-dimensional Si layer intercalated with calcium. The EPR spectra of multilayer structures with regions of two-dimensional Si layers embedded in CaF2 demonstrate an isotropic signal with an asymmetric Dyson shape and the g-factor g = 1.9992 under illumination. Consequently, this signal can be attributed to photoinduced conduction electrons in extended two-dimensional Si islands. These results may be useful for understanding the mechanisms of the formation of two-dimensional materials on CaF2/Si(111) substrates.",
author = "Zinovyev, {V. A.} and Zinovieva, {A. F.} and Volodin, {V. A.} and Gutakovskii, {A. K.} and Deryabin, {A. S.} and Krupin, {A. Yu} and Kulik, {L. V.} and Zhivulko, {V. D.} and Mudryi, {A. V.} and Dvurechenskii, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2022, The Author(s).",
year = "2022",
month = nov,
doi = "10.1134/S0021364022602159",
language = "English",
volume = "116",
pages = "628--633",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "9",

}

RIS

TY - JOUR

T1 - Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

AU - Zinovyev, V. A.

AU - Zinovieva, A. F.

AU - Volodin, V. A.

AU - Gutakovskii, A. K.

AU - Deryabin, A. S.

AU - Krupin, A. Yu

AU - Kulik, L. V.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

AU - Dvurechenskii, A. V.

N1 - Publisher Copyright: © 2022, The Author(s).

PY - 2022/11

Y1 - 2022/11

N2 - The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and electron paramagnetic resonance (EPR) studies have shown that regions of two-dimensional Si layers are formed in epitaxial structures prepared by the deposition of one to three biatomic Si layers on the CaF2/Si(111) film surface at a temperature of 550°С. The Raman spectra of these structures exhibit a narrow peak at 418 cm–1, which is due to light scattering on vibrations of Si atoms in the plane of a two-dimensional Si layer intercalated with calcium. The EPR spectra of multilayer structures with regions of two-dimensional Si layers embedded in CaF2 demonstrate an isotropic signal with an asymmetric Dyson shape and the g-factor g = 1.9992 under illumination. Consequently, this signal can be attributed to photoinduced conduction electrons in extended two-dimensional Si islands. These results may be useful for understanding the mechanisms of the formation of two-dimensional materials on CaF2/Si(111) substrates.

AB - The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and electron paramagnetic resonance (EPR) studies have shown that regions of two-dimensional Si layers are formed in epitaxial structures prepared by the deposition of one to three biatomic Si layers on the CaF2/Si(111) film surface at a temperature of 550°С. The Raman spectra of these structures exhibit a narrow peak at 418 cm–1, which is due to light scattering on vibrations of Si atoms in the plane of a two-dimensional Si layer intercalated with calcium. The EPR spectra of multilayer structures with regions of two-dimensional Si layers embedded in CaF2 demonstrate an isotropic signal with an asymmetric Dyson shape and the g-factor g = 1.9992 under illumination. Consequently, this signal can be attributed to photoinduced conduction electrons in extended two-dimensional Si islands. These results may be useful for understanding the mechanisms of the formation of two-dimensional materials on CaF2/Si(111) substrates.

UR - http://www.scopus.com/inward/record.url?scp=85142434839&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/236dd1bb-e82e-3eaa-b8fe-08700a046ce5/

U2 - 10.1134/S0021364022602159

DO - 10.1134/S0021364022602159

M3 - Article

AN - SCOPUS:85142434839

VL - 116

SP - 628

EP - 633

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 9

ER -

ID: 39755882