Suspended quantum point contact with triple channel selectively driven by side gates

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Suspended quantum point contact with triple channel selectively driven by side gates. / Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu et al.

In: Applied Physics Letters, Vol. 115, No. 15, 152101, 07.10.2019.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{0fcf050762994cdba6d6202d760f350b,

title = "Suspended quantum point contact with triple channel selectively driven by side gates",

abstract = "The experimental study of the suspended GaAs quantum point contact (QPC) equipped with in-plane side gates reveals that, under such conditions, the QPC constriction has an unusual triple-channel structure involving three conductive channels with the quantized conductance selectively driven by the gates. The analysis of capacitance coefficients and channel widths allows us to conclude that the channels are narrow, compared to the lithographic constriction of the QPC, and that two of the channels are located along the constriction edges, while the other one passes along the middle line. The suspended QPC with the selectively driven triple-channel structure represents a device with an enhanced functionality. The electrostatic mechanism of the channel formation, specific for trench-Type suspended QPCs with side gates, is discussed.",

author = "Pokhabov, {D. A.} and Pogosov, {A. G.} and Zhdanov, {E. Yu} and Bakarov, {A. K.} and Shklyaev, {A. A.}",

year = "2019",

month = oct,

day = "7",

doi = "10.1063/1.5123035",

language = "English",

volume = "115",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

RIS

TY - JOUR

T1 - Suspended quantum point contact with triple channel selectively driven by side gates

AU - Pokhabov, D. A.

AU - Pogosov, A. G.

AU - Zhdanov, E. Yu

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

PY - 2019/10/7

Y1 - 2019/10/7

N2 - The experimental study of the suspended GaAs quantum point contact (QPC) equipped with in-plane side gates reveals that, under such conditions, the QPC constriction has an unusual triple-channel structure involving three conductive channels with the quantized conductance selectively driven by the gates. The analysis of capacitance coefficients and channel widths allows us to conclude that the channels are narrow, compared to the lithographic constriction of the QPC, and that two of the channels are located along the constriction edges, while the other one passes along the middle line. The suspended QPC with the selectively driven triple-channel structure represents a device with an enhanced functionality. The electrostatic mechanism of the channel formation, specific for trench-Type suspended QPCs with side gates, is discussed.

AB - The experimental study of the suspended GaAs quantum point contact (QPC) equipped with in-plane side gates reveals that, under such conditions, the QPC constriction has an unusual triple-channel structure involving three conductive channels with the quantized conductance selectively driven by the gates. The analysis of capacitance coefficients and channel widths allows us to conclude that the channels are narrow, compared to the lithographic constriction of the QPC, and that two of the channels are located along the constriction edges, while the other one passes along the middle line. The suspended QPC with the selectively driven triple-channel structure represents a device with an enhanced functionality. The electrostatic mechanism of the channel formation, specific for trench-Type suspended QPCs with side gates, is discussed.

UR - http://www.scopus.com/inward/record.url?scp=85073559332&partnerID=8YFLogxK

U2 - 10.1063/1.5123035

DO - 10.1063/1.5123035

M3 - Article

AN - SCOPUS:85073559332

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152101

ER -

ID: 21936577