Standard

Surface photovoltage in a p-GaN(Cs) photocathode. / Rozhkov, S. A.; Bakin, V. V.; Gorshkov, D. V. et al.

In: Journal of Physics: Conference Series, Vol. 1199, No. 1, 012031, 17.04.2019.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Rozhkov, SA, Bakin, VV, Gorshkov, DV, Kosolobov, SN & Scheibler, HE 2019, 'Surface photovoltage in a p-GaN(Cs) photocathode', Journal of Physics: Conference Series, vol. 1199, no. 1, 012031. https://doi.org/10.1088/1742-6596/1199/1/012031

APA

Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N., & Scheibler, H. E. (2019). Surface photovoltage in a p-GaN(Cs) photocathode. Journal of Physics: Conference Series, 1199(1), [012031]. https://doi.org/10.1088/1742-6596/1199/1/012031

Vancouver

Rozhkov SA, Bakin VV, Gorshkov DV, Kosolobov SN, Scheibler HE. Surface photovoltage in a p-GaN(Cs) photocathode. Journal of Physics: Conference Series. 2019 Apr 17;1199(1):012031. doi: 10.1088/1742-6596/1199/1/012031

Author

Rozhkov, S. A. ; Bakin, V. V. ; Gorshkov, D. V. et al. / Surface photovoltage in a p-GaN(Cs) photocathode. In: Journal of Physics: Conference Series. 2019 ; Vol. 1199, No. 1.

BibTeX

@article{2547463f82494cfcb4a6a68e6fafa12e,
title = "Surface photovoltage in a p-GaN(Cs) photocathode",
abstract = "Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.",
author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Gorshkov, {D. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.}",
year = "2019",
month = apr,
day = "17",
doi = "10.1088/1742-6596/1199/1/012031",
language = "English",
volume = "1199",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 ; Conference date: 26-11-2018 Through 30-11-2018",

}

RIS

TY - JOUR

T1 - Surface photovoltage in a p-GaN(Cs) photocathode

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Gorshkov, D. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.

AB - Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.

UR - http://www.scopus.com/inward/record.url?scp=85065609581&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012031

DO - 10.1088/1742-6596/1199/1/012031

M3 - Conference article

AN - SCOPUS:85065609581

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012031

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -

ID: 20049769