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Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface. / Kovchavtsev, A. P.; Aksenov, M. S.; Nastov’yak, A. E. et al.

In: Technical Physics Letters, Vol. 46, No. 5, 01.05.2020, p. 469-472.

Research output: Contribution to journal › Article › peer-review

Harvard

Kovchavtsev, AP, Aksenov, MS, Nastov’yak, AE, Valisheva, NA, Gorshkov, DV, Sidorov, GY & Dmitriev, DV 2020, 'Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface', Technical Physics Letters, vol. 46, no. 5, pp. 469-472. https://doi.org/10.1134/S1063785020050259

APA

Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., & Dmitriev, D. V. (2020). Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface. Technical Physics Letters, 46(5), 469-472. https://doi.org/10.1134/S1063785020050259

Vancouver

Kovchavtsev AP, Aksenov MS, Nastov’yak AE, Valisheva NA, Gorshkov DV, Sidorov GY et al. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface. Technical Physics Letters. 2020 May 1;46(5):469-472. doi: 10.1134/S1063785020050259

Author

Kovchavtsev, A. P. ; Aksenov, M. S. ; Nastov’yak, A. E. et al. / Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface. In: Technical Physics Letters. 2020 ; Vol. 46, No. 5. pp. 469-472.

BibTeX

@article{66cdf769b214410eb0bc40f10c3e616f,
title = "Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface",
abstract = "The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based metal–insulator–semiconductor structures, in contrast standard registration method to at a constant voltage sweep rate, significantly weakens the effect of the hysteresis phenomena and allows one to record stationary curves. It is shown that the density of fast interface states calculated by the Terman method from such C–V characteristics slightly changes over the InAlAs band gap and amounts to (3–6) × 1011 and (1–3) × 1011 eV–1 cm–2 for MIS structures with Al2O3 and SiO2, respectively.",
keywords = "C–V characteristic, density of interface states, InAlAs, insulator, C-Vcharacteristic, 48SAs, In0, 52Al0",
author = "Kovchavtsev, {A. P.} and Aksenov, {M. S.} and Nastov{\textquoteright}yak, {A. E.} and Valisheva, {N. A.} and Gorshkov, {D. V.} and Sidorov, {G. Yu} and Dmitriev, {D. V.}",
year = "2020",
month = may,
day = "1",
doi = "10.1134/S1063785020050259",
language = "English",
volume = "46",
pages = "469--472",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

AU - Kovchavtsev, A. P.

AU - Aksenov, M. S.

AU - Nastov’yak, A. E.

AU - Valisheva, N. A.

AU - Gorshkov, D. V.

AU - Sidorov, G. Yu

AU - Dmitriev, D. V.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based metal–insulator–semiconductor structures, in contrast standard registration method to at a constant voltage sweep rate, significantly weakens the effect of the hysteresis phenomena and allows one to record stationary curves. It is shown that the density of fast interface states calculated by the Terman method from such C–V characteristics slightly changes over the InAlAs band gap and amounts to (3–6) × 1011 and (1–3) × 1011 eV–1 cm–2 for MIS structures with Al2O3 and SiO2, respectively.

AB - The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based metal–insulator–semiconductor structures, in contrast standard registration method to at a constant voltage sweep rate, significantly weakens the effect of the hysteresis phenomena and allows one to record stationary curves. It is shown that the density of fast interface states calculated by the Terman method from such C–V characteristics slightly changes over the InAlAs band gap and amounts to (3–6) × 1011 and (1–3) × 1011 eV–1 cm–2 for MIS structures with Al2O3 and SiO2, respectively.

KW - C–V characteristic

KW - density of interface states

KW - InAlAs

KW - insulator

KW - C-Vcharacteristic

KW - 48SAs

KW - In0

KW - 52Al0

UR - http://www.scopus.com/inward/record.url?scp=85086510079&partnerID=8YFLogxK

U2 - 10.1134/S1063785020050259

DO - 10.1134/S1063785020050259

M3 - Article

AN - SCOPUS:85086510079

VL - 46

SP - 469

EP - 472

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 5

ER -

ID: 24516466