Research output: Contribution to journal › Article › peer-review
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides. / Popov, V. P.; Tikhonenko, F. V.; Antonov, V. A. et al.
In: Solid-State Electronics, Vol. 194, 108348, 08.2022.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides
AU - Popov, V. P.
AU - Tikhonenko, F. V.
AU - Antonov, V. A.
AU - Tolmachev, K. A.
AU - Lomov, A. A.
AU - Miakonkikh, A. V.
AU - Rudenko, K. V.
N1 - The authors thank for the partial financial support from the RFBR grant no. 19-29-03031. Publisher Copyright: © 2022 Elsevier Ltd
PY - 2022/8
Y1 - 2022/8
N2 - Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO2 layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO2:Al2O3 (10:1).
AB - Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO2 layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO2:Al2O3 (10:1).
KW - Dipoles
KW - Ferroelectric
KW - GIXRD
KW - high-k BOX
KW - Phases
UR - http://www.scopus.com/inward/record.url?scp=85129081099&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/e44d25ac-e6f9-317d-bcbd-768b3358eff9/
U2 - 10.1016/j.sse.2022.108348
DO - 10.1016/j.sse.2022.108348
M3 - Article
AN - SCOPUS:85129081099
VL - 194
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
M1 - 108348
ER -
ID: 36037154