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Splitting of frequencies of optical phonons in tensile-strained germanium layers. / Volodin, V. A.; Timofeev, V. A.; Tuktamyshev, A. R. et al.

In: JETP Letters, Vol. 105, No. 5, 01.03.2017, p. 327-331.

Research output: Contribution to journal › Article › peer-review

Harvard

Volodin, VA, Timofeev, VA, Tuktamyshev, AR & Nikiforov, AI 2017, 'Splitting of frequencies of optical phonons in tensile-strained germanium layers', JETP Letters, vol. 105, no. 5, pp. 327-331. https://doi.org/10.1134/S0021364017050137

APA

Volodin, V. A., Timofeev, V. A., Tuktamyshev, A. R., & Nikiforov, A. I. (2017). Splitting of frequencies of optical phonons in tensile-strained germanium layers. JETP Letters, 105(5), 327-331. https://doi.org/10.1134/S0021364017050137

Vancouver

Volodin VA, Timofeev VA, Tuktamyshev AR, Nikiforov AI. Splitting of frequencies of optical phonons in tensile-strained germanium layers. JETP Letters. 2017 Mar 1;105(5):327-331. doi: 10.1134/S0021364017050137

Author

Volodin, V. A. ; Timofeev, V. A. ; Tuktamyshev, A. R. et al. / Splitting of frequencies of optical phonons in tensile-strained germanium layers. In: JETP Letters. 2017 ; Vol. 105, No. 5. pp. 327-331.

BibTeX

@article{29dd5663dc61406784aa869b0ce41ec4,
title = "Splitting of frequencies of optical phonons in tensile-strained germanium layers",
abstract = "Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.",
author = "Volodin, {V. A.} and Timofeev, {V. A.} and Tuktamyshev, {A. R.} and Nikiforov, {A. I.}",
year = "2017",
month = mar,
day = "1",
doi = "10.1134/S0021364017050137",
language = "English",
volume = "105",
pages = "327--331",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "5",

}

RIS

TY - JOUR

T1 - Splitting of frequencies of optical phonons in tensile-strained germanium layers

AU - Volodin, V. A.

AU - Timofeev, V. A.

AU - Tuktamyshev, A. R.

AU - Nikiforov, A. I.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.

AB - Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.

UR - http://www.scopus.com/inward/record.url?scp=85019622546&partnerID=8YFLogxK

U2 - 10.1134/S0021364017050137

DO - 10.1134/S0021364017050137

M3 - Article

AN - SCOPUS:85019622546

VL - 105

SP - 327

EP - 331

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 5

ER -

ID: 10191141