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About
Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy
Research output
:
Contribution to journal
›
Article
›
peer-review
Quantum Phenomena in Condensed Systems Laboratory
Nano-Superconduction Laboratory
Overview
Cite this
DOI
https://doi.org/10.1016/j.jcrysgro.2017.09.005
Final published version
A. B. Talochkin
V. A. Timofeev
A. K. Gutakovskii
V. I. Mashanov
Original language
English
Pages (from-to)
205-211
Number of pages
7
Journal
Journal of Crystal Growth
Volume
478
DOIs
https://doi.org/10.1016/j.jcrysgro.2017.09.005
Publication status
Published -
15 Nov 2017
OECD FOS+WOS
Research areas
A1. Nanostructures, A1. Solid solutions, A3. Molecular beam epitaxy, B1. Germanium silicon alloys, B2. Semiconducting silicon compounds, Germanium silicon alloys, SEMICONDUCTORS, SILICON, Nanostructures, SI(100), BAND-GAP, STRAIN-SHIFT COEFFICIENTS, RAMAN-SCATTERING, Semiconducting silicon compounds, GERMANIUM, Solid solutions, Molecular beam epitaxy, SIXSNYGE1-X-Y
ID: 9869866
