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Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique. / Utkin, Dmitriy; Shklyaev, Alexander.

2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. p. 33-36 9507661 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Utkin, D & Shklyaev, A 2021, Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique. in 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings., 9507661, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2021-June, IEEE Computer Society, pp. 33-36, 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021, Aya, Altai Region, Russian Federation, 30.06.2021. https://doi.org/10.1109/EDM52169.2021.9507661

APA

Utkin, D., & Shklyaev, A. (2021). Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique. In 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings (pp. 33-36). [9507661] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June). IEEE Computer Society. https://doi.org/10.1109/EDM52169.2021.9507661

Vancouver

Utkin D, Shklyaev A. Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique. In 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society. 2021. p. 33-36. 9507661. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM52169.2021.9507661

Author

Utkin, Dmitriy ; Shklyaev, Alexander. / Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique. 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. pp. 33-36 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

BibTeX

@inproceedings{2deee2128d5745ce9ca415dcba1b8ce1,
title = "Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique",
abstract = "The development of photonic devices based on the use of coatings that consist of ordered dielectric particle arrays is determined by the need to reduce their energy consumption and increase their efficiency. Unlike perforated metal coatings commonly used to control light intensity in optoelectronic structures, dielectric coatings result in a significantly less light dissipation. We develop a method for obtaining an ordered dielectric particle array without using the etching process. The method is based on the use of electronic lithography with the removal of excess material by 'explosion', that is by the lift-off method. We obtained arrays of Ge and Si particles sized from 100 to 400 nm on silicon substrates. It was found that the particle shape is determined by both the slope of the hole walls in the electron resist and the deposited material flow direction.",
keywords = "dielectric particles, film deposition, germanium, lift-off, lithography, semiconductors, silicon",
author = "Dmitriy Utkin and Alexander Shklyaev",
note = "Electron lithography was carried out using the equipment of CKP “VTAN” in the ATRC department of NSU. The equipment of CKP “NANOSTRUKTURY” was also used for the investigated structures fabrication. Publisher Copyright: {\textcopyright} 2021 IEEE.; 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 ; Conference date: 30-06-2021 Through 04-07-2021",
year = "2021",
month = jun,
day = "30",
doi = "10.1109/EDM52169.2021.9507661",
language = "English",
isbn = "9781665414982",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "33--36",
booktitle = "2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings",
address = "United States",

}

RIS

TY - GEN

T1 - Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique

AU - Utkin, Dmitriy

AU - Shklyaev, Alexander

N1 - Electron lithography was carried out using the equipment of CKP “VTAN” in the ATRC department of NSU. The equipment of CKP “NANOSTRUKTURY” was also used for the investigated structures fabrication. Publisher Copyright: © 2021 IEEE.

PY - 2021/6/30

Y1 - 2021/6/30

N2 - The development of photonic devices based on the use of coatings that consist of ordered dielectric particle arrays is determined by the need to reduce their energy consumption and increase their efficiency. Unlike perforated metal coatings commonly used to control light intensity in optoelectronic structures, dielectric coatings result in a significantly less light dissipation. We develop a method for obtaining an ordered dielectric particle array without using the etching process. The method is based on the use of electronic lithography with the removal of excess material by 'explosion', that is by the lift-off method. We obtained arrays of Ge and Si particles sized from 100 to 400 nm on silicon substrates. It was found that the particle shape is determined by both the slope of the hole walls in the electron resist and the deposited material flow direction.

AB - The development of photonic devices based on the use of coatings that consist of ordered dielectric particle arrays is determined by the need to reduce their energy consumption and increase their efficiency. Unlike perforated metal coatings commonly used to control light intensity in optoelectronic structures, dielectric coatings result in a significantly less light dissipation. We develop a method for obtaining an ordered dielectric particle array without using the etching process. The method is based on the use of electronic lithography with the removal of excess material by 'explosion', that is by the lift-off method. We obtained arrays of Ge and Si particles sized from 100 to 400 nm on silicon substrates. It was found that the particle shape is determined by both the slope of the hole walls in the electron resist and the deposited material flow direction.

KW - dielectric particles

KW - film deposition

KW - germanium

KW - lift-off

KW - lithography

KW - semiconductors

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85113554713&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/23a67732-c782-315a-917e-890bff66b3b8/

U2 - 10.1109/EDM52169.2021.9507661

DO - 10.1109/EDM52169.2021.9507661

M3 - Conference contribution

AN - SCOPUS:85113554713

SN - 9781665414982

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 33

EP - 36

BT - 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings

PB - IEEE Computer Society

T2 - 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021

Y2 - 30 June 2021 through 4 July 2021

ER -

ID: 34914244