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Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. / Kozhukhov, A. S.; Sheglov, D. V.; Latyshev, A. V.

In: Semiconductors, Vol. 51, No. 4, 01.04.2017, p. 420-422.

Research output: Contribution to journal › Article › peer-review

Harvard

Kozhukhov, AS, Sheglov, DV & Latyshev, AV 2017, 'Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe', Semiconductors, vol. 51, no. 4, pp. 420-422. https://doi.org/10.1134/S1063782617040091

APA

Kozhukhov, A. S., Sheglov, D. V., & Latyshev, A. V. (2017). Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. Semiconductors, 51(4), 420-422. https://doi.org/10.1134/S1063782617040091

Vancouver

Kozhukhov AS, Sheglov DV, Latyshev AV. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. Semiconductors. 2017 Apr 1;51(4):420-422. doi: 10.1134/S1063782617040091

Author

Kozhukhov, A. S. ; Sheglov, D. V. ; Latyshev, A. V. / Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. In: Semiconductors. 2017 ; Vol. 51, No. 4. pp. 420-422.

BibTeX

@article{62300c6caf04423097a87ffbb788c02d,
title = "Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe",
abstract = "A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.",
author = "Kozhukhov, {A. S.} and Sheglov, {D. V.} and Latyshev, {A. V.}",
year = "2017",
month = apr,
day = "1",
doi = "10.1134/S1063782617040091",
language = "English",
volume = "51",
pages = "420--422",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "4",

}

RIS

TY - JOUR

T1 - Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

AU - Kozhukhov, A. S.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

AB - A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

UR - http://www.scopus.com/inward/record.url?scp=85018515081&partnerID=8YFLogxK

U2 - 10.1134/S1063782617040091

DO - 10.1134/S1063782617040091

M3 - Article

AN - SCOPUS:85018515081

VL - 51

SP - 420

EP - 422

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 10036005