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Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction. / Basalaeva, L. S.; Nastaushev, Yu V.; Kryzhanovskaya, N. V. et al.

In: Thin Solid Films, Vol. 672, 28.02.2019, p. 109-113.

Research output: Contribution to journal › Article › peer-review

Harvard

Basalaeva, LS, Nastaushev, YV, Kryzhanovskaya, NV, Moiseev, EI, Radnatarov, DA, Khripunov, SA, Utkin, DE, Chistokhin, IB, Latyshev, AV & Dultsev, FN 2019, 'Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction', Thin Solid Films, vol. 672, pp. 109-113. https://doi.org/10.1016/j.tsf.2019.01.007

APA

Basalaeva, L. S., Nastaushev, Y. V., Kryzhanovskaya, N. V., Moiseev, E. I., Radnatarov, D. A., Khripunov, S. A., Utkin, D. E., Chistokhin, I. B., Latyshev, A. V., & Dultsev, F. N. (2019). Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction. Thin Solid Films, 672, 109-113. https://doi.org/10.1016/j.tsf.2019.01.007

Vancouver

Basalaeva LS, Nastaushev YV, Kryzhanovskaya NV, Moiseev EI, Radnatarov DA, Khripunov SA et al. Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction. Thin Solid Films. 2019 Feb 28;672:109-113. doi: 10.1016/j.tsf.2019.01.007

Author

Basalaeva, L. S. ; Nastaushev, Yu V. ; Kryzhanovskaya, N. V. et al. / Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction. In: Thin Solid Films. 2019 ; Vol. 672. pp. 109-113.

BibTeX

@article{ed4c6ef9fa7f4e9eb3da7fcb63e908e4,
title = "Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction",
abstract = "Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.",
keywords = "Electron beam lithography, Electrophysical properties, Reactive ion etching, Reflectance spectra, Silicon nanopillars",
author = "Basalaeva, {L. S.} and Nastaushev, {Yu V.} and Kryzhanovskaya, {N. V.} and Moiseev, {E. I.} and Radnatarov, {D. A.} and Khripunov, {S. A.} and Utkin, {D. E.} and Chistokhin, {I. B.} and Latyshev, {A. V.} and Dultsev, {F. N.}",
note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",
year = "2019",
month = feb,
day = "28",
doi = "10.1016/j.tsf.2019.01.007",
language = "English",
volume = "672",
pages = "109--113",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction

AU - Basalaeva, L. S.

AU - Nastaushev, Yu V.

AU - Kryzhanovskaya, N. V.

AU - Moiseev, E. I.

AU - Radnatarov, D. A.

AU - Khripunov, S. A.

AU - Utkin, D. E.

AU - Chistokhin, I. B.

AU - Latyshev, A. V.

AU - Dultsev, F. N.

N1 - Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/2/28

Y1 - 2019/2/28

N2 - Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.

AB - Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.

KW - Electron beam lithography

KW - Electrophysical properties

KW - Reactive ion etching

KW - Reflectance spectra

KW - Silicon nanopillars

UR - http://www.scopus.com/inward/record.url?scp=85060128802&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.01.007

DO - 10.1016/j.tsf.2019.01.007

M3 - Article

AN - SCOPUS:85060128802

VL - 672

SP - 109

EP - 113

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

ID: 18295071