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Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. / Mishchenko, Irina B.; Petukhova, Darya E.; Lebedev, Mikhail S.

2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July IEEE Computer Society, 2018. p. 26-29 8434943.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Mishchenko, IB, Petukhova, DE & Lebedev, MS 2018, Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. in 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. vol. 2018-July, 8434943, IEEE Computer Society, pp. 26-29, 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018, Erlagol, Altai, Russian Federation, 29.06.2018. https://doi.org/10.1109/EDM.2018.8434943

APA

Mishchenko, I. B., Petukhova, D. E., & Lebedev, M. S. (2018). Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. In 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings (Vol. 2018-July, pp. 26-29). [8434943] IEEE Computer Society. https://doi.org/10.1109/EDM.2018.8434943

Vancouver

Mishchenko IB, Petukhova DE, Lebedev MS. Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. In 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July. IEEE Computer Society. 2018. p. 26-29. 8434943 doi: 10.1109/EDM.2018.8434943

Author

Mishchenko, Irina B. ; Petukhova, Darya E. ; Lebedev, Mikhail S. / Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July IEEE Computer Society, 2018. pp. 26-29

BibTeX

@inproceedings{c26a3ec35c924f4dbf7ddd4dd69afc8b,
title = "Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry",
abstract = "The HfO2/TiO2 multilayers with different bilayer period, which are currently used as dielectrics in modern microelectronics, were deposited by atomic layer deposition (ALD). The complementary ellipsometric techniques were applied to measure the thickness and describe the optical properties of the stacks and superlattices deposited. A nonmonotonic dependence of the effective refractive index on the number of each layer ALD-cycles was shown. The approach suggested can be useful for the similar ALD-processes and for further studies of the properties of dielectrics. The data obtained give important information about the features of Hf02 and TiO2nucleation during alternate layers growth.",
keywords = "ALD, Dispersion model, Ellipsometry, Stack, Superlattice",
author = "Mishchenko, {Irina B.} and Petukhova, {Darya E.} and Lebedev, {Mikhail S.}",
year = "2018",
month = aug,
day = "13",
doi = "10.1109/EDM.2018.8434943",
language = "English",
isbn = "9781538650219",
volume = "2018-July",
pages = "26--29",
booktitle = "2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings",
publisher = "IEEE Computer Society",
address = "United States",
note = "19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 ; Conference date: 29-06-2018 Through 03-07-2018",

}

RIS

TY - GEN

T1 - Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry

AU - Mishchenko, Irina B.

AU - Petukhova, Darya E.

AU - Lebedev, Mikhail S.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - The HfO2/TiO2 multilayers with different bilayer period, which are currently used as dielectrics in modern microelectronics, were deposited by atomic layer deposition (ALD). The complementary ellipsometric techniques were applied to measure the thickness and describe the optical properties of the stacks and superlattices deposited. A nonmonotonic dependence of the effective refractive index on the number of each layer ALD-cycles was shown. The approach suggested can be useful for the similar ALD-processes and for further studies of the properties of dielectrics. The data obtained give important information about the features of Hf02 and TiO2nucleation during alternate layers growth.

AB - The HfO2/TiO2 multilayers with different bilayer period, which are currently used as dielectrics in modern microelectronics, were deposited by atomic layer deposition (ALD). The complementary ellipsometric techniques were applied to measure the thickness and describe the optical properties of the stacks and superlattices deposited. A nonmonotonic dependence of the effective refractive index on the number of each layer ALD-cycles was shown. The approach suggested can be useful for the similar ALD-processes and for further studies of the properties of dielectrics. The data obtained give important information about the features of Hf02 and TiO2nucleation during alternate layers growth.

KW - ALD

KW - Dispersion model

KW - Ellipsometry

KW - Stack

KW - Superlattice

UR - http://www.scopus.com/inward/record.url?scp=85052398264&partnerID=8YFLogxK

U2 - 10.1109/EDM.2018.8434943

DO - 10.1109/EDM.2018.8434943

M3 - Conference contribution

AN - SCOPUS:85052398264

SN - 9781538650219

VL - 2018-July

SP - 26

EP - 29

BT - 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings

PB - IEEE Computer Society

T2 - 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018

Y2 - 29 June 2018 through 3 July 2018

ER -

ID: 16265413