TY - JOUR

T1 - Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor

AU - Yen, Te Jui

AU - Chin, Albert

AU - Chan, Weng Kent

AU - Chen, Hsin Yi Tiffany

AU - Gritsenko, Vladimir

N1 - Funding Information: This research was funded by the Ministry of Science and Technology of Taiwan, project no. 110-2221-E-A49-137-MY3 and 108-2112-M-007-023-MY3. The computing resource were supported by TAIWANIA in the National Center for High-Performance Computing (NCHC) in Taiwan. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2 /V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (µFE ), of 41.8 cm2 /V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION /IOFF ) value, of 8.9 × 106 . This remarkably high ION /IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2 /V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION /IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.

AB - High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2 /V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (µFE ), of 41.8 cm2 /V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION /IOFF ) value, of 8.9 × 106 . This remarkably high ION /IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2 /V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION /IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.

KW - 3D brain-mimicking ICs

KW - GeSn

KW - Monolithic 3D IC

KW - Nanosheet TFT

UR - http://www.scopus.com/inward/record.url?scp=85122876747&partnerID=8YFLogxK

U2 - 10.3390/nano12020261

DO - 10.3390/nano12020261

M3 - Article

C2 - 35055277

AN - SCOPUS:85122876747

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 2

M1 - 261

ER -