Standard

Photoelectron scattering in a p-GaN(Cs,O) photocathode. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N. et al.

In: Journal of Physics: Conference Series, Vol. 993, No. 1, 012027, 10.04.2018.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Rozhkov, SA, Bakin, VV, Kosolobov, SN, Scheibler, HE & Terekhov, AS 2018, 'Photoelectron scattering in a p-GaN(Cs,O) photocathode', Journal of Physics: Conference Series, vol. 993, no. 1, 012027. https://doi.org/10.1088/1742-6596/993/1/012027

APA

Rozhkov, S. A., Bakin, V. V., Kosolobov, S. N., Scheibler, H. E., & Terekhov, A. S. (2018). Photoelectron scattering in a p-GaN(Cs,O) photocathode. Journal of Physics: Conference Series, 993(1), [012027]. https://doi.org/10.1088/1742-6596/993/1/012027

Vancouver

Rozhkov SA, Bakin VV, Kosolobov SN, Scheibler HE, Terekhov AS. Photoelectron scattering in a p-GaN(Cs,O) photocathode. Journal of Physics: Conference Series. 2018 Apr 10;993(1):012027. doi: 10.1088/1742-6596/993/1/012027

Author

Rozhkov, S. A. ; Bakin, V. V. ; Kosolobov, S. N. et al. / Photoelectron scattering in a p-GaN(Cs,O) photocathode. In: Journal of Physics: Conference Series. 2018 ; Vol. 993, No. 1.

BibTeX

@article{ca6fc7f003054e92a7df78cb46949018,
title = "Photoelectron scattering in a p-GaN(Cs,O) photocathode",
abstract = "Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.",
keywords = "NEGATIVE ELECTRON-AFFINITY, GAN, BAND, INTERFACE",
author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.} and Terekhov, {A. S.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",
year = "2018",
month = apr,
day = "10",
doi = "10.1088/1742-6596/993/1/012027",
language = "English",
volume = "993",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Photoelectron scattering in a p-GaN(Cs,O) photocathode

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

AB - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

KW - NEGATIVE ELECTRON-AFFINITY

KW - GAN

KW - BAND

KW - INTERFACE

UR - http://www.scopus.com/inward/record.url?scp=85046088949&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012027

DO - 10.1088/1742-6596/993/1/012027

M3 - Conference article

AN - SCOPUS:85046088949

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012027

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

Y2 - 27 November 2017 through 1 December 2017

ER -

ID: 12916470