TY - JOUR

T1 - Photocurrent in MIS structures based on germanosilicate films

AU - Хамуд, Гайсаа

AU - Камаев, Геннадий Николаевич

AU - Vergnat, M.

AU - Володин, Владимир Алексеевич

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation, project FSUS-2024-0020.

PY - 2024/5

Y1 - 2024/5

N2 - The photocurrent in metal-insulator-semiconductor (MIS) structures based on germanosilicate films on n-type silicon with a transparent top electrode made of indium tin oxide has been studied. The first structure contained a GeO[SiO2] layer as a dielectric, and the second structure contained an additional Ge layer 3 nm thick, separated from the silicon substrate by a tunnel-thin layer of SiO2. High photosensitivity was obtained for both structures, both as-deposited and after annealing at 500 °C for 30 minutes. A mechanism for the generation of photocurrent is proposed, based on the absorption of photons in a depletion region of silicon and tunneling of charge carriers through the dielectric. In the case of the second structure, an additional mechanism for the occurrence of photocurrent associated with the absorption of photons in the Ge layer is assumed. The studied MIS structures can be used in simple, inexpensive photodiodes that do not require the creation of p–n junctions.

AB - The photocurrent in metal-insulator-semiconductor (MIS) structures based on germanosilicate films on n-type silicon with a transparent top electrode made of indium tin oxide has been studied. The first structure contained a GeO[SiO2] layer as a dielectric, and the second structure contained an additional Ge layer 3 nm thick, separated from the silicon substrate by a tunnel-thin layer of SiO2. High photosensitivity was obtained for both structures, both as-deposited and after annealing at 500 °C for 30 minutes. A mechanism for the generation of photocurrent is proposed, based on the absorption of photons in a depletion region of silicon and tunneling of charge carriers through the dielectric. In the case of the second structure, an additional mechanism for the occurrence of photocurrent associated with the absorption of photons in the Ge layer is assumed. The studied MIS structures can be used in simple, inexpensive photodiodes that do not require the creation of p–n junctions.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85197951043&origin=inward&txGid=2b8ddc0f832be00eb8c2eee8f07b9a60

U2 - 10.18721/JPM.171.124

DO - 10.18721/JPM.171.124

M3 - Conference article

VL - 17

SP - 149

EP - 154

JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

SN - 2618-8686

IS - 1.1

ER -