Optimization of The Thickness of Single-Layer Antireflection SiO2 Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light

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Optimization of The Thickness of Single-Layer Antireflection SiO₂ Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light. / Timofeev, A. V.; Mil’shtein, A. I.; Grigor’ev, D. N.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 59, No. 5, 10.2023, p. 612-619.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{ebfa9d6091364a79b99e6e51d8135cc2,

title = "Optimization of The Thickness of Single-Layer Antireflection SiO2 Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light",

abstract = "Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness, which is optimal in the case of the normal incidence of monochromatic light.",

keywords = "antireflection coating, photodiode, reflection coefficient",

author = "Timofeev, {A. V.} and Mil{\textquoteright}shtein, {A. I.} and Grigor{\textquoteright}ev, {D. N.}",

note = "This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained. Публикация для корректировки.",

year = "2023",

month = oct,

doi = "10.3103/S8756699023050096",

language = "English",

volume = "59",

pages = "612--619",

journal = "Optoelectronics, Instrumentation and Data Processing",

issn = "8756-6990",

publisher = "Allerton Press Inc.",

number = "5",

}

RIS

TY - JOUR

T1 - Optimization of The Thickness of Single-Layer Antireflection SiO2 Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light

AU - Timofeev, A. V.

AU - Mil’shtein, A. I.

AU - Grigor’ev, D. N.

N1 - This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained. Публикация для корректировки.

PY - 2023/10

Y1 - 2023/10

N2 - Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness, which is optimal in the case of the normal incidence of monochromatic light.

AB - Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness, which is optimal in the case of the normal incidence of monochromatic light.

KW - antireflection coating

KW - photodiode

KW - reflection coefficient

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85187240784&origin=inward&txGid=9986577d445070a0c9930521996c1514

UR - https://www.mendeley.com/catalogue/3d0b9f4d-9561-3874-b361-39d629fdd4b6/

U2 - 10.3103/S8756699023050096

DO - 10.3103/S8756699023050096

M3 - Article

VL - 59

SP - 612

EP - 619

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 59780246