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Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal. / Talochkin, A. B.; Kokh, K. A.; Tereshchenko, O. E.

In: JETP Letters, Vol. 113, No. 10, 05.2021, p. 651-656.

Research output: Contribution to journal › Article › peer-review

Harvard

Talochkin, AB, Kokh, KA & Tereshchenko, OE 2021, 'Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal', JETP Letters, vol. 113, no. 10, pp. 651-656. https://doi.org/10.1134/S002136402110012X

APA

Talochkin, A. B., Kokh, K. A., & Tereshchenko, O. E. (2021). Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal. JETP Letters, 113(10), 651-656. https://doi.org/10.1134/S002136402110012X

Vancouver

Talochkin AB, Kokh KA, Tereshchenko OE. Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal. JETP Letters. 2021 May;113(10):651-656. doi: 10.1134/S002136402110012X

Author

Talochkin, A. B. ; Kokh, K. A. ; Tereshchenko, O. E. / Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal. In: JETP Letters. 2021 ; Vol. 113, No. 10. pp. 651-656.

BibTeX

@article{dbf104d9b53b4921b5277b6c70b6d966,
title = "Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal",
abstract = "Raman scattering by optical phonons of the Ge2Sb2Te5 single crystal grown by the Bridgman method is studied for the first time. Another method for obtaining this compound based on annealing of the amorphous state and used in numerous previous studies leads to the formation of various defects which significantly affect the optical phonons spectrum. This hampers the identification of observed phonon spectra. The use of the bulk Ge2Sb2Te5 single crystal has made it possible to exclude the effect of lattice defects and to reveal new features of the phonon spectrum associated with the lattice structure. Broad features typical of the amorphous state and narrow phonon lines of the crystal state are observed in the spectra. It has been shown that the former component is due to disorder appearing because of the mixing of Ge and Sb atoms in corresponding layers of the lattice. Moreover, there are optical phonons whose frequencies are independent of this mi-xing in view of the specificity of their eigenvectors. These modes are manifested in spectra as intense narrow lines.",
author = "Talochkin, {A. B.} and Kokh, {K. A.} and Tereshchenko, {O. E.}",
note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = may,
doi = "10.1134/S002136402110012X",
language = "English",
volume = "113",
pages = "651--656",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "10",

}

RIS

TY - JOUR

T1 - Optical Phonon Spectrum of the Ge2Sb2Te5 Single Crystal

AU - Talochkin, A. B.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/5

Y1 - 2021/5

N2 - Raman scattering by optical phonons of the Ge2Sb2Te5 single crystal grown by the Bridgman method is studied for the first time. Another method for obtaining this compound based on annealing of the amorphous state and used in numerous previous studies leads to the formation of various defects which significantly affect the optical phonons spectrum. This hampers the identification of observed phonon spectra. The use of the bulk Ge2Sb2Te5 single crystal has made it possible to exclude the effect of lattice defects and to reveal new features of the phonon spectrum associated with the lattice structure. Broad features typical of the amorphous state and narrow phonon lines of the crystal state are observed in the spectra. It has been shown that the former component is due to disorder appearing because of the mixing of Ge and Sb atoms in corresponding layers of the lattice. Moreover, there are optical phonons whose frequencies are independent of this mi-xing in view of the specificity of their eigenvectors. These modes are manifested in spectra as intense narrow lines.

AB - Raman scattering by optical phonons of the Ge2Sb2Te5 single crystal grown by the Bridgman method is studied for the first time. Another method for obtaining this compound based on annealing of the amorphous state and used in numerous previous studies leads to the formation of various defects which significantly affect the optical phonons spectrum. This hampers the identification of observed phonon spectra. The use of the bulk Ge2Sb2Te5 single crystal has made it possible to exclude the effect of lattice defects and to reveal new features of the phonon spectrum associated with the lattice structure. Broad features typical of the amorphous state and narrow phonon lines of the crystal state are observed in the spectra. It has been shown that the former component is due to disorder appearing because of the mixing of Ge and Sb atoms in corresponding layers of the lattice. Moreover, there are optical phonons whose frequencies are independent of this mi-xing in view of the specificity of their eigenvectors. These modes are manifested in spectra as intense narrow lines.

UR - http://www.scopus.com/inward/record.url?scp=85110966478&partnerID=8YFLogxK

U2 - 10.1134/S002136402110012X

DO - 10.1134/S002136402110012X

M3 - Article

AN - SCOPUS:85110966478

VL - 113

SP - 651

EP - 656

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 29232886