On Raman scattering cross section ratio of amorphous to nanocrystalline germanium

Standard

On Raman scattering cross section ratio of amorphous to nanocrystalline germanium. / Hao, Zhang; Kochubei, S. A.; Popov, A. A. et al.

In: Solid State Communications, Vol. 313, 113897, 06.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Hao, Z, Kochubei, SA, Popov, AA & Volodin, VA 2020, 'On Raman scattering cross section ratio of amorphous to nanocrystalline germanium', Solid State Communications, vol. 313, 113897. https://doi.org/10.1016/j.ssc.2020.113897

APA

Hao, Z., Kochubei, S. A., Popov, A. A., & Volodin, V. A. (2020). On Raman scattering cross section ratio of amorphous to nanocrystalline germanium. Solid State Communications, 313, [113897]. https://doi.org/10.1016/j.ssc.2020.113897

Vancouver

Hao Z, Kochubei SA, Popov AA, Volodin VA. On Raman scattering cross section ratio of amorphous to nanocrystalline germanium. Solid State Communications. 2020 Jun;313:113897. doi: 10.1016/j.ssc.2020.113897

Author

Hao, Zhang ; Kochubei, S. A. ; Popov, A. A. et al. / On Raman scattering cross section ratio of amorphous to nanocrystalline germanium. In: Solid State Communications. 2020 ; Vol. 313.

BibTeX

@article{c3e5cd870e0c4edaabb2066837ea7b6e,

title = "On Raman scattering cross section ratio of amorphous to nanocrystalline germanium",

abstract = "Raman scattering spectroscopy is powerful, express and non-destructive method for control of phase composition of different materials. To determine the crystalline part, one should know the ratio of Raman cross sections of crystalline to amorphous phases. In this Letter we report on accurate comparative measurements of the Raman scattering from monocrystalline and nanocrystalline Ge, as well as from amorphous Ge films. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of monocrystalline and nanocrystalline Ge to amorphous Ge, for the first time. For monocrystalline Ge the obtained ratio is equal to 4, while for nanocrystalline Ge this ratio decreased monotonously with a decrease of the nanocrystal sizes. Some physical reasons of the experimentally observed dependence are proposed.",

keywords = "Germanium, Nanocrystals, Raman scattering, CRYSTALLIZATION, FILMS, SI, SILICON",

author = "Zhang Hao and Kochubei, {S. A.} and Popov, {A. A.} and Volodin, {V. A.}",

year = "2020",

month = jun,

doi = "10.1016/j.ssc.2020.113897",

language = "English",

volume = "313",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - On Raman scattering cross section ratio of amorphous to nanocrystalline germanium

AU - Hao, Zhang

AU - Kochubei, S. A.

AU - Popov, A. A.

AU - Volodin, V. A.

PY - 2020/6

Y1 - 2020/6

N2 - Raman scattering spectroscopy is powerful, express and non-destructive method for control of phase composition of different materials. To determine the crystalline part, one should know the ratio of Raman cross sections of crystalline to amorphous phases. In this Letter we report on accurate comparative measurements of the Raman scattering from monocrystalline and nanocrystalline Ge, as well as from amorphous Ge films. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of monocrystalline and nanocrystalline Ge to amorphous Ge, for the first time. For monocrystalline Ge the obtained ratio is equal to 4, while for nanocrystalline Ge this ratio decreased monotonously with a decrease of the nanocrystal sizes. Some physical reasons of the experimentally observed dependence are proposed.

AB - Raman scattering spectroscopy is powerful, express and non-destructive method for control of phase composition of different materials. To determine the crystalline part, one should know the ratio of Raman cross sections of crystalline to amorphous phases. In this Letter we report on accurate comparative measurements of the Raman scattering from monocrystalline and nanocrystalline Ge, as well as from amorphous Ge films. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of monocrystalline and nanocrystalline Ge to amorphous Ge, for the first time. For monocrystalline Ge the obtained ratio is equal to 4, while for nanocrystalline Ge this ratio decreased monotonously with a decrease of the nanocrystal sizes. Some physical reasons of the experimentally observed dependence are proposed.

KW - Germanium

KW - Nanocrystals

KW - Raman scattering

KW - CRYSTALLIZATION

KW - FILMS

KW - SI

KW - SILICON

UR - http://www.scopus.com/inward/record.url?scp=85083223719&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2020.113897

DO - 10.1016/j.ssc.2020.113897

M3 - Article

AN - SCOPUS:85083223719

VL - 313

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

M1 - 113897

ER -

ID: 24075134