TY - JOUR

T1 - Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

AU - Abramkin, Demid S.

AU - Atuchin, Victor V.

N1 - Funding Information: This work was supported by the Russian Science Foundation, grant 22-22-20031 https://rscf.ru/project/22-22-20031/ (21 March 2022), and by the Novosibirsk Regional Government, grant No. r-14 (6 April 2022). Publisher Copyright: © 2022 by the authors.

PY - 2022/11

Y1 - 2022/11

N2 - Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD with hole localization energy (Eloc) sufficient for a long charge storage (10 years). In the present work, the hole states’ energy spectrum in novel InGaSb/AlP SAQDs was analyzed theoretically with a focus on its possible application in non-volatile memories. Material intermixing and formation of strained SAQDs from a GaxAl1−xSbyP1−y, InxAl1−xSbyP1−y or an InxGa1−xSbyP1−y alloy were taken into account. Critical sizes of SAQDs, with respect to the introduction of misfit dislocation as a function of alloy composition, were estimated using the force-balancing model. A variation in SAQDs’ composition together with dot sizes allowed us to find that the optimal configuration for the non-volatile memory application is GaSbP/AlP SAQDs with the 0.55–0.65 Sb fraction and a height of 4–4.5 nm, providing the Eloc value of 1.35–1.50 eV. Additionally, the hole energy spectra in unstrained InSb/AlP and GaSb/AlP SAQDs were calculated. Eloc values up to 1.65–1.70 eV were predicted, and that makes unstrained InGaSb/AlP SAQDs a prospective object for the non-volatile memory application.

AB - Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD with hole localization energy (Eloc) sufficient for a long charge storage (10 years). In the present work, the hole states’ energy spectrum in novel InGaSb/AlP SAQDs was analyzed theoretically with a focus on its possible application in non-volatile memories. Material intermixing and formation of strained SAQDs from a GaxAl1−xSbyP1−y, InxAl1−xSbyP1−y or an InxGa1−xSbyP1−y alloy were taken into account. Critical sizes of SAQDs, with respect to the introduction of misfit dislocation as a function of alloy composition, were estimated using the force-balancing model. A variation in SAQDs’ composition together with dot sizes allowed us to find that the optimal configuration for the non-volatile memory application is GaSbP/AlP SAQDs with the 0.55–0.65 Sb fraction and a height of 4–4.5 nm, providing the Eloc value of 1.35–1.50 eV. Additionally, the hole energy spectra in unstrained InSb/AlP and GaSb/AlP SAQDs were calculated. Eloc values up to 1.65–1.70 eV were predicted, and that makes unstrained InGaSb/AlP SAQDs a prospective object for the non-volatile memory application.

KW - hole localization

KW - non-volatile memories

KW - QD-Flash

KW - quantum dots memories

KW - quaternary alloy

KW - self-assembled quantum dots

KW - strain

KW - universal memories

UR - http://www.scopus.com/inward/record.url?scp=85141881125&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/e6417776-be97-33d4-bfaf-7ec6ff672d1f/

U2 - 10.3390/nano12213794

DO - 10.3390/nano12213794

M3 - Article

C2 - 36364571

AN - SCOPUS:85141881125

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 21

M1 - 3794

ER -