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New multilayer graphene-based flash memory. / Novikov, Yu N.; Gritsenko, V. A.

In: Materials Research Express, Vol. 6, No. 10, 106306, 21.08.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Novikov, YN & Gritsenko, VA 2019, 'New multilayer graphene-based flash memory', Materials Research Express, vol. 6, no. 10, 106306. https://doi.org/10.1088/2053-1591/ab3992

APA

Novikov, Y. N., & Gritsenko, V. A. (2019). New multilayer graphene-based flash memory. Materials Research Express, 6(10), [106306]. https://doi.org/10.1088/2053-1591/ab3992

Vancouver

Novikov YN, Gritsenko VA. New multilayer graphene-based flash memory. Materials Research Express. 2019 Aug 21;6(10):106306. doi: 10.1088/2053-1591/ab3992

Author

Novikov, Yu N. ; Gritsenko, V. A. / New multilayer graphene-based flash memory. In: Materials Research Express. 2019 ; Vol. 6, No. 10.

BibTeX

@article{1736866667664b9892e905bdc4c1e55c,
title = "New multilayer graphene-based flash memory",
abstract = "In the present work, it is proposed to use multilayer graphene (MLG) as a charge storage layer in the non-volatile memory based on the Si/ZrO2/MLG/SiO2/Si structure. The write/erase, retention characteristics and charge density kinetics in the MLG of the memory element are calculated. Due to the metallic properties of MLG and the blocking layer made of high-k dielectric, the voltage drop on them in the write/erase mode is decreased. At the same time, the increase in the voltage drop in the SiO2 tunneling layer grows, in its turn, the Fowler-Nordheim current, which leads to a higher memory element performance. The big work function for electrons (∼5 eV) in MLG contributes to a better charge storage in it. According to our calculations, for write/erase voltages of ±11 V, there is a 5 V memory window, and the memory window value will be equal to 3 V in 10 years.",
keywords = "blocking oxide, FLASH, multilayer graphene, retention, tunnel oxide, CONTACT, GRAPHITE",
author = "Novikov, {Yu N.} and Gritsenko, {V. A.}",
year = "2019",
month = aug,
day = "21",
doi = "10.1088/2053-1591/ab3992",
language = "English",
volume = "6",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "10",

}

RIS

TY - JOUR

T1 - New multilayer graphene-based flash memory

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

PY - 2019/8/21

Y1 - 2019/8/21

N2 - In the present work, it is proposed to use multilayer graphene (MLG) as a charge storage layer in the non-volatile memory based on the Si/ZrO2/MLG/SiO2/Si structure. The write/erase, retention characteristics and charge density kinetics in the MLG of the memory element are calculated. Due to the metallic properties of MLG and the blocking layer made of high-k dielectric, the voltage drop on them in the write/erase mode is decreased. At the same time, the increase in the voltage drop in the SiO2 tunneling layer grows, in its turn, the Fowler-Nordheim current, which leads to a higher memory element performance. The big work function for electrons (∼5 eV) in MLG contributes to a better charge storage in it. According to our calculations, for write/erase voltages of ±11 V, there is a 5 V memory window, and the memory window value will be equal to 3 V in 10 years.

AB - In the present work, it is proposed to use multilayer graphene (MLG) as a charge storage layer in the non-volatile memory based on the Si/ZrO2/MLG/SiO2/Si structure. The write/erase, retention characteristics and charge density kinetics in the MLG of the memory element are calculated. Due to the metallic properties of MLG and the blocking layer made of high-k dielectric, the voltage drop on them in the write/erase mode is decreased. At the same time, the increase in the voltage drop in the SiO2 tunneling layer grows, in its turn, the Fowler-Nordheim current, which leads to a higher memory element performance. The big work function for electrons (∼5 eV) in MLG contributes to a better charge storage in it. According to our calculations, for write/erase voltages of ±11 V, there is a 5 V memory window, and the memory window value will be equal to 3 V in 10 years.

KW - blocking oxide

KW - FLASH

KW - multilayer graphene

KW - retention

KW - tunnel oxide

KW - CONTACT

KW - GRAPHITE

UR - http://www.scopus.com/inward/record.url?scp=85071583616&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/ab3992

DO - 10.1088/2053-1591/ab3992

M3 - Article

AN - SCOPUS:85071583616

VL - 6

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 10

M1 - 106306

ER -

ID: 21465043