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Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters. / Volodin, Vladimir A.; Kamaev, Gennadiy N.; Vergnat, Michel.

In: Physica Status Solidi - Rapid Research Letters, Vol. 14, No. 7, 2000165, 01.07.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Volodin, VA, Kamaev, GN & Vergnat, M 2020, 'Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters', Physica Status Solidi - Rapid Research Letters, vol. 14, no. 7, 2000165. https://doi.org/10.1002/pssr.202000165

APA

Volodin, V. A., Kamaev, G. N., & Vergnat, M. (2020). Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters. Physica Status Solidi - Rapid Research Letters, 14(7), [2000165]. https://doi.org/10.1002/pssr.202000165

Vancouver

Volodin VA, Kamaev GN, Vergnat M. Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters. Physica Status Solidi - Rapid Research Letters. 2020 Jul 1;14(7):2000165. doi: 10.1002/pssr.202000165

Author

Volodin, Vladimir A. ; Kamaev, Gennadiy N. ; Vergnat, Michel. / Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters. In: Physica Status Solidi - Rapid Research Letters. 2020 ; Vol. 14, No. 7.

BibTeX

@article{cbef0890f3cf45a58b5c451de5d82485,
title = "Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters",
abstract = "Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n+-Si(100) substrate by co-evaporation of GeO2 and SiO powders in ultra-high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes originating from Ge-nanoclusters, which act as traps.",
keywords = "Ge nanoclusters, germanosilicate glasses, memristors, negative photoconductivity, MEMORY, SIO2-FILMS, SI, FIELD, NANOCRYSTALS, DEVICES",
author = "Volodin, {Vladimir A.} and Kamaev, {Gennadiy N.} and Michel Vergnat",
note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2020",
month = jul,
day = "1",
doi = "10.1002/pssr.202000165",
language = "English",
volume = "14",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "7",

}

RIS

TY - JOUR

T1 - Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters

AU - Volodin, Vladimir A.

AU - Kamaev, Gennadiy N.

AU - Vergnat, Michel

N1 - Publisher Copyright: © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n+-Si(100) substrate by co-evaporation of GeO2 and SiO powders in ultra-high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes originating from Ge-nanoclusters, which act as traps.

AB - Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n+-Si(100) substrate by co-evaporation of GeO2 and SiO powders in ultra-high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes originating from Ge-nanoclusters, which act as traps.

KW - Ge nanoclusters

KW - germanosilicate glasses

KW - memristors

KW - negative photoconductivity

KW - MEMORY

KW - SIO2-FILMS

KW - SI

KW - FIELD

KW - NANOCRYSTALS

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=85085481361&partnerID=8YFLogxK

U2 - 10.1002/pssr.202000165

DO - 10.1002/pssr.202000165

M3 - Article

AN - SCOPUS:85085481361

VL - 14

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 7

M1 - 2000165

ER -

ID: 24411542