Standard

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate. / Gulyaev, Dmitrii V.; Abramkin, Demid S.; Dmitriev, Dmitriy V. et al.

In: Nanomaterials, Vol. 14, No. 22, 1842, 11.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Gulyaev, DV, Abramkin, DS, Dmitriev, DV, Toropov, AI, Kolosovsky, EA, Ponomarev, SA, Kurus, NN, Milekhin, IA & Zhuravlev, KS 2024, 'Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate', Nanomaterials, vol. 14, no. 22, 1842. https://doi.org/10.3390/nano14221842

APA

Gulyaev, D. V., Abramkin, D. S., Dmitriev, D. V., Toropov, A. I., Kolosovsky, E. A., Ponomarev, S. A., Kurus, N. N., Milekhin, I. A., & Zhuravlev, K. S. (2024). Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate. Nanomaterials, 14(22), [1842]. https://doi.org/10.3390/nano14221842

Vancouver

Gulyaev DV, Abramkin DS, Dmitriev DV, Toropov AI, Kolosovsky EA, Ponomarev SA et al. Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate. Nanomaterials. 2024 Nov;14(22):1842. doi: 10.3390/nano14221842

Author

Gulyaev, Dmitrii V. ; Abramkin, Demid S. ; Dmitriev, Dmitriy V. et al. / Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate. In: Nanomaterials. 2024 ; Vol. 14, No. 22.

BibTeX

@article{df5819df5ae649559e1cddb8fe6c50f1,
title = "Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate",
abstract = "The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy. The formation of the surface pits with lateral sizes in the micron range and a depth of about 2 ÷ 10 nm has been detected. The InP substrate annealing temperature and value of InAlAs alloy composition deviation from the lattice-matched InxAl1−xAs/InP case (x = 0.52) control the density of pits ranging from 5 × 105 cm−2 ÷ 108 cm−2. The pit sizes are controlled by the InAlAs layer thickness and growth temperature. The correlation between the surface pits and threading dislocations has been detected. Moreover, the InAlAs surface is characterized by composition inhomogeneity with a magnitude of 0.7% with the cluster lateral sizes and density close to these parameters for surface pits. The experimental data allow us to suggest a model where the formation of surface pits and composition clusters is caused by the influence of a local strain field in the threading dislocation core vicinity on In adatoms incorporating kinetic.",
keywords = "InAlAs, InP, desorption, molecular beam epitaxy, solid alloy, surface morphology, surface pits, threading dislocations",
author = "Gulyaev, {Dmitrii V.} and Abramkin, {Demid S.} and Dmitriev, {Dmitriy V.} and Toropov, {Alexander I.} and Kolosovsky, {Eugeniy A.} and Ponomarev, {Sergey A.} and Kurus, {Nina N.} and Milekhin, {Ilya A.} and Zhuravlev, {Konstantin S.}",
note = "This work was supported by the Russian Science Foundation, grant 23-22-10054 and by the Novosibirsk Regional Government, grant r-50. ",
year = "2024",
month = nov,
doi = "10.3390/nano14221842",
language = "English",
volume = "14",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "22",

}

RIS

TY - JOUR

T1 - Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

AU - Gulyaev, Dmitrii V.

AU - Abramkin, Demid S.

AU - Dmitriev, Dmitriy V.

AU - Toropov, Alexander I.

AU - Kolosovsky, Eugeniy A.

AU - Ponomarev, Sergey A.

AU - Kurus, Nina N.

AU - Milekhin, Ilya A.

AU - Zhuravlev, Konstantin S.

N1 - This work was supported by the Russian Science Foundation, grant 23-22-10054 and by the Novosibirsk Regional Government, grant r-50.

PY - 2024/11

Y1 - 2024/11

N2 - The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy. The formation of the surface pits with lateral sizes in the micron range and a depth of about 2 ÷ 10 nm has been detected. The InP substrate annealing temperature and value of InAlAs alloy composition deviation from the lattice-matched InxAl1−xAs/InP case (x = 0.52) control the density of pits ranging from 5 × 105 cm−2 ÷ 108 cm−2. The pit sizes are controlled by the InAlAs layer thickness and growth temperature. The correlation between the surface pits and threading dislocations has been detected. Moreover, the InAlAs surface is characterized by composition inhomogeneity with a magnitude of 0.7% with the cluster lateral sizes and density close to these parameters for surface pits. The experimental data allow us to suggest a model where the formation of surface pits and composition clusters is caused by the influence of a local strain field in the threading dislocation core vicinity on In adatoms incorporating kinetic.

AB - The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy. The formation of the surface pits with lateral sizes in the micron range and a depth of about 2 ÷ 10 nm has been detected. The InP substrate annealing temperature and value of InAlAs alloy composition deviation from the lattice-matched InxAl1−xAs/InP case (x = 0.52) control the density of pits ranging from 5 × 105 cm−2 ÷ 108 cm−2. The pit sizes are controlled by the InAlAs layer thickness and growth temperature. The correlation between the surface pits and threading dislocations has been detected. Moreover, the InAlAs surface is characterized by composition inhomogeneity with a magnitude of 0.7% with the cluster lateral sizes and density close to these parameters for surface pits. The experimental data allow us to suggest a model where the formation of surface pits and composition clusters is caused by the influence of a local strain field in the threading dislocation core vicinity on In adatoms incorporating kinetic.

KW - InAlAs

KW - InP

KW - desorption

KW - molecular beam epitaxy

KW - solid alloy

KW - surface morphology

KW - surface pits

KW - threading dislocations

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85210442060&origin=inward&txGid=617bde2bbb61a43fe266cae1b1f60856

UR - https://www.mendeley.com/catalogue/727f30c2-b2f1-3942-b543-808e06e84729/

U2 - 10.3390/nano14221842

DO - 10.3390/nano14221842

M3 - Article

C2 - 39591082

VL - 14

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 22

M1 - 1842

ER -

ID: 61147031