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MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor. / Dorovskikh, Svetlana I.; Zharkova, Galina I.; Zelenina, Ludmila N. et al.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 12, No. 7, 01.07.2015, p. 1053-1059.

Research output: Contribution to journal › Article › peer-review

Harvard

Dorovskikh, SI, Zharkova, GI, Zelenina, LN, Asanov, IP, Kal'nii, DB, Kokovkin, VV, Shubin, YV, Basova, TV & Morozova, NB 2015, 'MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 12, no. 7, pp. 1053-1059. https://doi.org/10.1002/pssc.201510045

APA

Dorovskikh, S. I., Zharkova, G. I., Zelenina, L. N., Asanov, I. P., Kal'nii, D. B., Kokovkin, V. V., Shubin, Y. V., Basova, T. V., & Morozova, N. B. (2015). MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor. Physica Status Solidi (C) Current Topics in Solid State Physics, 12(7), 1053-1059. https://doi.org/10.1002/pssc.201510045

Vancouver

Dorovskikh SI, Zharkova GI, Zelenina LN, Asanov IP, Kal'nii DB, Kokovkin VV et al. MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor. Physica Status Solidi (C) Current Topics in Solid State Physics. 2015 Jul 1;12(7):1053-1059. doi: 10.1002/pssc.201510045

Author

Dorovskikh, Svetlana I. ; Zharkova, Galina I. ; Zelenina, Ludmila N. et al. / MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2015 ; Vol. 12, No. 7. pp. 1053-1059.

BibTeX

@article{28ebbbbb667a40a0a07e33a7184ca050,
title = "MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor",
abstract = "The Me3Pt(acac)Py compound, trimethyl(pentane-2,4-dionato)platinum(IV)pyridine, is synthesized and, for the first time, characterized by physico-chemical methods to determine its chemical composition (elemental analysis, IR-spectroscopy) and thermal behavior (thermogravimetric (TG), differential thermal analyses (DTA), differential scanning calorimetry (DSC), tensometric flow method). Due to its good volatility ln(p/p°) = 16.47-9699/T(K) at moderate temperatures (393-414 K) the compound is offered as a promising precursor for growth of Pt films by metal-organic chemical vapour deposition (MOCVD). The Pt films deposited on various substrates including Si(100), Ta, Ti substrates, cathodes and anodes of the electrodes for pacemakers are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The electrochemical characteristics of Pt films are also determined.",
keywords = "Electrochemical characteristics, MOCVD, Pt films, Pt precursor, Vapour pressure",
author = "Dorovskikh, {Svetlana I.} and Zharkova, {Galina I.} and Zelenina, {Ludmila N.} and Asanov, {Igor P.} and Kal'nii, {Danila B.} and Kokovkin, {Vasily V.} and Shubin, {Yuri V.} and Basova, {Tamara V.} and Morozova, {Natalia B.}",
year = "2015",
month = jul,
day = "1",
doi = "10.1002/pssc.201510045",
language = "English",
volume = "12",
pages = "1053--1059",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "7",

}

RIS

TY - JOUR

T1 - MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor

AU - Dorovskikh, Svetlana I.

AU - Zharkova, Galina I.

AU - Zelenina, Ludmila N.

AU - Asanov, Igor P.

AU - Kal'nii, Danila B.

AU - Kokovkin, Vasily V.

AU - Shubin, Yuri V.

AU - Basova, Tamara V.

AU - Morozova, Natalia B.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The Me3Pt(acac)Py compound, trimethyl(pentane-2,4-dionato)platinum(IV)pyridine, is synthesized and, for the first time, characterized by physico-chemical methods to determine its chemical composition (elemental analysis, IR-spectroscopy) and thermal behavior (thermogravimetric (TG), differential thermal analyses (DTA), differential scanning calorimetry (DSC), tensometric flow method). Due to its good volatility ln(p/p°) = 16.47-9699/T(K) at moderate temperatures (393-414 K) the compound is offered as a promising precursor for growth of Pt films by metal-organic chemical vapour deposition (MOCVD). The Pt films deposited on various substrates including Si(100), Ta, Ti substrates, cathodes and anodes of the electrodes for pacemakers are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The electrochemical characteristics of Pt films are also determined.

AB - The Me3Pt(acac)Py compound, trimethyl(pentane-2,4-dionato)platinum(IV)pyridine, is synthesized and, for the first time, characterized by physico-chemical methods to determine its chemical composition (elemental analysis, IR-spectroscopy) and thermal behavior (thermogravimetric (TG), differential thermal analyses (DTA), differential scanning calorimetry (DSC), tensometric flow method). Due to its good volatility ln(p/p°) = 16.47-9699/T(K) at moderate temperatures (393-414 K) the compound is offered as a promising precursor for growth of Pt films by metal-organic chemical vapour deposition (MOCVD). The Pt films deposited on various substrates including Si(100), Ta, Ti substrates, cathodes and anodes of the electrodes for pacemakers are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The electrochemical characteristics of Pt films are also determined.

KW - Electrochemical characteristics

KW - MOCVD

KW - Pt films

KW - Pt precursor

KW - Vapour pressure

UR - http://www.scopus.com/inward/record.url?scp=84935729209&partnerID=8YFLogxK

U2 - 10.1002/pssc.201510045

DO - 10.1002/pssc.201510045

M3 - Article

AN - SCOPUS:84935729209

VL - 12

SP - 1053

EP - 1059

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -

ID: 25436237