TY - JOUR

T1 - Method for Manufacturing Silicon X-Ray Masks Via Plasma Chemical Etching

AU - Gentselev, A. N.

AU - Dultsev, F. N.

AU - Goldenberg, B. G.

AU - Kuper, K. E.

PY - 2020/7/1

Y1 - 2020/7/1

N2 - A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 Å), is described. This method is based on planar silicon technology, which is widely used in the production of semiconductor devices. A significant difference between this method and previously known analogues is that it does not apply the creation of a stop layer by doping during formation of the support membrane of the mask. As the initial blank, a standard (100) oriented silicon wafer is used. The silicon support membrane of the mask is formed in the final stage of its manufacture by plasma-chemical etching of the rear-side of the wafer to a predetermined depth. The thus obtained X-ray masks on a silicon wafer are characterized by relative ease of manufacture, radiation and chemical resistance, geometric stability, and relatively high levels of mechanical strength and X-ray transparency of the support membrane, depending on its thickness, which can be manufactured with good accuracy and within a fairly wide range of ~2.5–50 μm, depending on the purpose of the mask.

AB - A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 Å), is described. This method is based on planar silicon technology, which is widely used in the production of semiconductor devices. A significant difference between this method and previously known analogues is that it does not apply the creation of a stop layer by doping during formation of the support membrane of the mask. As the initial blank, a standard (100) oriented silicon wafer is used. The silicon support membrane of the mask is formed in the final stage of its manufacture by plasma-chemical etching of the rear-side of the wafer to a predetermined depth. The thus obtained X-ray masks on a silicon wafer are characterized by relative ease of manufacture, radiation and chemical resistance, geometric stability, and relatively high levels of mechanical strength and X-ray transparency of the support membrane, depending on its thickness, which can be manufactured with good accuracy and within a fairly wide range of ~2.5–50 μm, depending on the purpose of the mask.

KW - deep X-ray lithography

KW - LIGA technology

KW - X-ray masks

KW - LITHOGRAPHY

UR - http://www.scopus.com/inward/record.url?scp=85089816894&partnerID=8YFLogxK

U2 - 10.1134/S1027451020040266

DO - 10.1134/S1027451020040266

M3 - Article

AN - SCOPUS:85089816894

VL - 14

SP - 862

EP - 865

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 4

ER -