Standard

Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts. / Miserev, D. S.; Srinivasan, A.; Tkachenko, O. A. et al.

In: Physical Review Letters, Vol. 119, No. 11, 116803, 12.09.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Miserev, DS, Srinivasan, A, Tkachenko, OA, Tkachenko, VA, Farrer, I, Ritchie, DA, Hamilton, AR & Sushkov, OP 2017, 'Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts', Physical Review Letters, vol. 119, no. 11, 116803. https://doi.org/10.1103/PhysRevLett.119.116803

APA

Miserev, D. S., Srinivasan, A., Tkachenko, O. A., Tkachenko, V. A., Farrer, I., Ritchie, D. A., Hamilton, A. R., & Sushkov, O. P. (2017). Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts. Physical Review Letters, 119(11), [116803]. https://doi.org/10.1103/PhysRevLett.119.116803

Vancouver

Miserev DS, Srinivasan A, Tkachenko OA, Tkachenko VA, Farrer I, Ritchie DA et al. Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts. Physical Review Letters. 2017 Sept 12;119(11):116803. doi: 10.1103/PhysRevLett.119.116803

Author

Miserev, D. S. ; Srinivasan, A. ; Tkachenko, O. A. et al. / Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts. In: Physical Review Letters. 2017 ; Vol. 119, No. 11.

BibTeX

@article{3ab0313173ff452295f72b4925882365,
title = "Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts",
abstract = "In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional B+k-4σ+ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B-k-2σ+ considered until now.",
keywords = "2-DIMENSIONAL ELECTRON-GAS, QUANTIZED CONDUCTANCE, SEMICONDUCTORS, CONSTRICTION, TRANSPORT, STATES",
author = "Miserev, {D. S.} and A. Srinivasan and Tkachenko, {O. A.} and Tkachenko, {V. A.} and I. Farrer and Ritchie, {D. A.} and Hamilton, {A. R.} and Sushkov, {O. P.}",
note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",
year = "2017",
month = sep,
day = "12",
doi = "10.1103/PhysRevLett.119.116803",
language = "English",
volume = "119",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "11",

}

RIS

TY - JOUR

T1 - Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts

AU - Miserev, D. S.

AU - Srinivasan, A.

AU - Tkachenko, O. A.

AU - Tkachenko, V. A.

AU - Farrer, I.

AU - Ritchie, D. A.

AU - Hamilton, A. R.

AU - Sushkov, O. P.

N1 - Publisher Copyright: © 2017 American Physical Society.

PY - 2017/9/12

Y1 - 2017/9/12

N2 - In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional B+k-4σ+ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B-k-2σ+ considered until now.

AB - In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional B+k-4σ+ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B-k-2σ+ considered until now.

KW - 2-DIMENSIONAL ELECTRON-GAS

KW - QUANTIZED CONDUCTANCE

KW - SEMICONDUCTORS

KW - CONSTRICTION

KW - TRANSPORT

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85029902033&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.119.116803

DO - 10.1103/PhysRevLett.119.116803

M3 - Article

C2 - 28949235

AN - SCOPUS:85029902033

VL - 119

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 11

M1 - 116803

ER -

ID: 9560421