Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts › Research Explorer

Novosibirsk State University's Research Portal

Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts

Research output: Contribution to journal › Article › peer-review

Theoretical Physics Section

DOI

https://doi.org/10.1103/PhysRevLett.119.116803
Final published version

D. S. Miserev
A. Srinivasan
O. A. Tkachenko
V. A. Tkachenko
I. Farrer
D. A. Ritchie
A. R. Hamilton
O. P. Sushkov

Original language	English
Article number	116803
Number of pages	5
Journal	Physical Review Letters
Volume	119
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.119.116803
Publication status	Published - 12 Sept 2017

Research areas

2-DIMENSIONAL ELECTRON-GAS, QUANTIZED CONDUCTANCE, SEMICONDUCTORS, CONSTRICTION, TRANSPORT, STATES

OECD FOS+WOS

ID: 9560421