Standard

Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon. / Islamov, Damir R.; Gritsenko, V. A.; Perevalov, T. V. et al.

In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012003, 15.08.2017.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Islamov, DR, Gritsenko, VA, Perevalov, TV, Orlov, OM & Krasnikov, GY 2017, 'Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon', Journal of Physics: Conference Series, vol. 864, no. 1, 012003. https://doi.org/10.1088/1742-6596/864/1/012003

APA

Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Orlov, O. M., & Krasnikov, G. Y. (2017). Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon. Journal of Physics: Conference Series, 864(1), [012003]. https://doi.org/10.1088/1742-6596/864/1/012003

Vancouver

Islamov DR, Gritsenko VA, Perevalov TV, Orlov OM, Krasnikov GY. Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon. Journal of Physics: Conference Series. 2017 Aug 15;864(1):012003. doi: 10.1088/1742-6596/864/1/012003

Author

Islamov, Damir R. ; Gritsenko, V. A. ; Perevalov, T. V. et al. / Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon. In: Journal of Physics: Conference Series. 2017 ; Vol. 864, No. 1.

BibTeX

@article{b88cfd23830a4256ae462c3aae969de0,
title = "Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon",
abstract = "We study the charge transport mechanism of electron via traps in thermal SiO2 on silicon. Electron transport is limited by phonon-assisted tunnelling between traps. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations, we found that the oxygen vacancies act as electron traps in SiO2.",
keywords = "ELECTRONS, FILM",
author = "Islamov, {Damir R.} and Gritsenko, {V. A.} and Perevalov, {T. V.} and Orlov, {O. M.} and Krasnikov, {G. Ya}",
year = "2017",
month = aug,
day = "15",
doi = "10.1088/1742-6596/864/1/012003",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon

AU - Islamov, Damir R.

AU - Gritsenko, V. A.

AU - Perevalov, T. V.

AU - Orlov, O. M.

AU - Krasnikov, G. Ya

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We study the charge transport mechanism of electron via traps in thermal SiO2 on silicon. Electron transport is limited by phonon-assisted tunnelling between traps. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations, we found that the oxygen vacancies act as electron traps in SiO2.

AB - We study the charge transport mechanism of electron via traps in thermal SiO2 on silicon. Electron transport is limited by phonon-assisted tunnelling between traps. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations, we found that the oxygen vacancies act as electron traps in SiO2.

KW - ELECTRONS

KW - FILM

UR - http://www.scopus.com/inward/record.url?scp=85028765408&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012003

DO - 10.1088/1742-6596/864/1/012003

M3 - Conference article

AN - SCOPUS:85028765408

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012003

ER -

ID: 9915627