Research output: Contribution to journal › Article › peer-review
Low-defect-density SnSe2 films nucleated via thin layer crystallization. / Ponomarev, S. A.; Zakhozhev, K. E.; Rogilo, D. I. et al.
In: Journal of Crystal Growth, Vol. 631, 127615, 01.04.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Low-defect-density SnSe2 films nucleated via thin layer crystallization
AU - Ponomarev, S. A.
AU - Zakhozhev, K. E.
AU - Rogilo, D. I.
AU - Gutakovsky, A. K.
AU - Kurus, N. N.
AU - Kokh, K. A.
AU - Sheglov, D. V.
AU - Milekhin, A. G.
AU - Latyshev, A. V.
N1 - This research was performed on the equipment of CKP Nanostruktury. Experiments on the Si(111) surface were supported by the State Government Task (project no. FWGW-2022-0007 ), and experiments on the Bi 2 Se 3 (0001) surface were financially supported by the Russian Science Foundation (grant no. 22-72-10124 ).
PY - 2024/4/1
Y1 - 2024/4/1
N2 - We have studied the structural and morphological features of SnSe2 films grown on Si(111) and Bi2Se3(0001) surfaces in an in situ reflection electron microscope. On both substrates, the SnSe2 growth started at 100 °C as an amorphous layer, and when thickness reached 1 nm, crystallized by raising the growth temperature to 250 °C without interruption of Sn and Se fluxes. The introduction of this growth-initiating stage has decreased the concentration of screw dislocations on films’ surfaces to ∼18 and ∼2 μm−2 for the Si(111) and Bi2Se3(0001) substrates, respectively. High-resolution transmission electron microscopy investigation has shown that the layered SnSe2 film has a hexagonal lattice structure corresponding to the space group P3¯m1 (no. 164) with lattice parameters a = 0.38 nm and c = 0.62 nm. Raman spectroscopy has shown vibrational modes corresponding to the 1T-SnSe2 phase. We have shown that the decrease in Se:Sn flux ratio switches growth mode from Frank—van der Merwe type SnSe2 epitaxy to Volmer—Weber type nucleation of SnSe 3D islands.
AB - We have studied the structural and morphological features of SnSe2 films grown on Si(111) and Bi2Se3(0001) surfaces in an in situ reflection electron microscope. On both substrates, the SnSe2 growth started at 100 °C as an amorphous layer, and when thickness reached 1 nm, crystallized by raising the growth temperature to 250 °C without interruption of Sn and Se fluxes. The introduction of this growth-initiating stage has decreased the concentration of screw dislocations on films’ surfaces to ∼18 and ∼2 μm−2 for the Si(111) and Bi2Se3(0001) substrates, respectively. High-resolution transmission electron microscopy investigation has shown that the layered SnSe2 film has a hexagonal lattice structure corresponding to the space group P3¯m1 (no. 164) with lattice parameters a = 0.38 nm and c = 0.62 nm. Raman spectroscopy has shown vibrational modes corresponding to the 1T-SnSe2 phase. We have shown that the decrease in Se:Sn flux ratio switches growth mode from Frank—van der Merwe type SnSe2 epitaxy to Volmer—Weber type nucleation of SnSe 3D islands.
KW - A1. Adsorption
KW - A1. Atomic force microscopy
KW - A1. Defect engineering
KW - A1. Surfaces
KW - A3. Molecular beam epitaxy
KW - A3. van der Waals epitaxy
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85184996971&origin=inward&txGid=e3c5dbadc43326e05d5489c1ec7ec510
UR - https://www.mendeley.com/catalogue/b1cf09ef-bc01-31cf-acbb-36d36912c0a0/
U2 - 10.1016/j.jcrysgro.2024.127615
DO - 10.1016/j.jcrysgro.2024.127615
M3 - Article
VL - 631
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 127615
ER -
ID: 61085307