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Light emission of heavily doped AlGaN structures under optical pumping. / Bokhan, P. A.; Fateev, N. V.; Osinnykh, I. V. et al.

In: Journal of Semiconductors, Vol. 39, No. 4, 043002, 01.04.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Bokhan, PA, Fateev, NV, Osinnykh, IV, Malin, TV, Zakrevsky, DE, Zhuravlev, KS, Wei, X, Li, J & Chen, L 2018, 'Light emission of heavily doped AlGaN structures under optical pumping', Journal of Semiconductors, vol. 39, no. 4, 043002. https://doi.org/10.1088/1674-4926/39/4/043002

APA

Bokhan, P. A., Fateev, N. V., Osinnykh, I. V., Malin, T. V., Zakrevsky, D. E., Zhuravlev, K. S., Wei, X., Li, J., & Chen, L. (2018). Light emission of heavily doped AlGaN structures under optical pumping. Journal of Semiconductors, 39(4), [043002]. https://doi.org/10.1088/1674-4926/39/4/043002

Vancouver

Bokhan PA, Fateev NV, Osinnykh IV, Malin TV, Zakrevsky DE, Zhuravlev KS et al. Light emission of heavily doped AlGaN structures under optical pumping. Journal of Semiconductors. 2018 Apr 1;39(4):043002. doi: 10.1088/1674-4926/39/4/043002

Author

Bokhan, P. A. ; Fateev, N. V. ; Osinnykh, I. V. et al. / Light emission of heavily doped AlGaN structures under optical pumping. In: Journal of Semiconductors. 2018 ; Vol. 39, No. 4.

BibTeX

@article{0d76ee5701424862b8e0922cf91d1129,
title = "Light emission of heavily doped AlGaN structures under optical pumping",
abstract = "Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/AlN structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with λ = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spontaneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radiation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm-1 for a weak signal.",
keywords = "film, laser material, optical characteristics, STIMULATED-EMISSION, LENGTH, GAIN",
author = "Bokhan, {P. A.} and Fateev, {N. V.} and Osinnykh, {I. V.} and Malin, {T. V.} and Zakrevsky, {Dm E.} and Zhuravlev, {K. S.} and Xin Wei and Jian Li and Lianghui Chen",
note = "Publisher Copyright: {\textcopyright} 2018 Chinese Institute of Electronics.",
year = "2018",
month = apr,
day = "1",
doi = "10.1088/1674-4926/39/4/043002",
language = "English",
volume = "39",
journal = "Journal of Semiconductors",
issn = "1674-4926",
publisher = "IOS Press",
number = "4",

}

RIS

TY - JOUR

T1 - Light emission of heavily doped AlGaN structures under optical pumping

AU - Bokhan, P. A.

AU - Fateev, N. V.

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Zakrevsky, Dm E.

AU - Zhuravlev, K. S.

AU - Wei, Xin

AU - Li, Jian

AU - Chen, Lianghui

N1 - Publisher Copyright: © 2018 Chinese Institute of Electronics.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/AlN structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with λ = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spontaneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radiation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm-1 for a weak signal.

AB - Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al0.5Ga0.5N/AlN structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with λ = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spontaneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radiation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm-1 for a weak signal.

KW - film

KW - laser material

KW - optical characteristics

KW - STIMULATED-EMISSION

KW - LENGTH

KW - GAIN

UR - http://www.scopus.com/inward/record.url?scp=85044847995&partnerID=8YFLogxK

U2 - 10.1088/1674-4926/39/4/043002

DO - 10.1088/1674-4926/39/4/043002

M3 - Article

AN - SCOPUS:85044847995

VL - 39

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

IS - 4

M1 - 043002

ER -

ID: 12419215