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Light Emission by Monolayers of Molybdenum Disulfide. / Marchenko, A. V.; Kurus, N. N.; Kolosvetov, A. A. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 57, No. 5, 12, 09.2021, p. 532-538.

Research output: Contribution to journal › Article › peer-review

Harvard

Marchenko, AV, Kurus, NN, Kolosvetov, AA & Milekhin, AG 2021, 'Light Emission by Monolayers of Molybdenum Disulfide', Optoelectronics, Instrumentation and Data Processing, vol. 57, no. 5, 12, pp. 532-538. https://doi.org/10.3103/S8756699021050101

APA

Marchenko, A. V., Kurus, N. N., Kolosvetov, A. A., & Milekhin, A. G. (2021). Light Emission by Monolayers of Molybdenum Disulfide. Optoelectronics, Instrumentation and Data Processing, 57(5), 532-538. [12]. https://doi.org/10.3103/S8756699021050101

Vancouver

Marchenko AV, Kurus NN, Kolosvetov AA, Milekhin AG. Light Emission by Monolayers of Molybdenum Disulfide. Optoelectronics, Instrumentation and Data Processing. 2021 Sept;57(5):532-538. 12. doi: 10.3103/S8756699021050101

Author

Marchenko, A. V. ; Kurus, N. N. ; Kolosvetov, A. A. et al. / Light Emission by Monolayers of Molybdenum Disulfide. In: Optoelectronics, Instrumentation and Data Processing. 2021 ; Vol. 57, No. 5. pp. 532-538.

BibTeX

@article{27745261eede4df6b71395ac3d3caa86,
title = "Light Emission by Monolayers of Molybdenum Disulfide",
abstract = "A comprehensive study of molybdenum disulfide monolayers formed on a silicon substrate is carried out using Raman scattering (RS), photoluminescence (PL), and by comparison with the data of atomic force microscopy (AFM). Maps of the intensity distribution of exciton PL and Raman scattering by optical phonons from monolayer MoS2 films are obtained. The dependences of the frequencies of the fundamental vibrational modes of MoS2 (A1g and E2g) on the thickness of monolayer coatings are obtained. An enhancement of the Raman mode of the optical phonon of silicon by a bilayer of molybdenum disulfide is found. A hypothesis on the interference enhancement of Raman scattering of light by phonon modes of silicon is proposed.",
keywords = "atomic force microscopy (AFM), enhancement of the Raman scattering on the optical phonon modes of silicon, molybdenum disulfide MoS${}_{2}$, photoluminescence (PL), Raman scattering (RS)",
author = "Marchenko, {A. V.} and Kurus, {N. N.} and Kolosvetov, {A. A.} and Milekhin, {A. G.}",
note = "Funding Information: The work was supported by the Russian Foundation for Basic Research (project no. 19-52-12041). Publisher Copyright: {\textcopyright} 2021, Allerton Press, Inc.",
year = "2021",
month = sep,
doi = "10.3103/S8756699021050101",
language = "English",
volume = "57",
pages = "532--538",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Light Emission by Monolayers of Molybdenum Disulfide

AU - Marchenko, A. V.

AU - Kurus, N. N.

AU - Kolosvetov, A. A.

AU - Milekhin, A. G.

N1 - Funding Information: The work was supported by the Russian Foundation for Basic Research (project no. 19-52-12041). Publisher Copyright: © 2021, Allerton Press, Inc.

PY - 2021/9

Y1 - 2021/9

N2 - A comprehensive study of molybdenum disulfide monolayers formed on a silicon substrate is carried out using Raman scattering (RS), photoluminescence (PL), and by comparison with the data of atomic force microscopy (AFM). Maps of the intensity distribution of exciton PL and Raman scattering by optical phonons from monolayer MoS2 films are obtained. The dependences of the frequencies of the fundamental vibrational modes of MoS2 (A1g and E2g) on the thickness of monolayer coatings are obtained. An enhancement of the Raman mode of the optical phonon of silicon by a bilayer of molybdenum disulfide is found. A hypothesis on the interference enhancement of Raman scattering of light by phonon modes of silicon is proposed.

AB - A comprehensive study of molybdenum disulfide monolayers formed on a silicon substrate is carried out using Raman scattering (RS), photoluminescence (PL), and by comparison with the data of atomic force microscopy (AFM). Maps of the intensity distribution of exciton PL and Raman scattering by optical phonons from monolayer MoS2 films are obtained. The dependences of the frequencies of the fundamental vibrational modes of MoS2 (A1g and E2g) on the thickness of monolayer coatings are obtained. An enhancement of the Raman mode of the optical phonon of silicon by a bilayer of molybdenum disulfide is found. A hypothesis on the interference enhancement of Raman scattering of light by phonon modes of silicon is proposed.

KW - atomic force microscopy (AFM)

KW - enhancement of the Raman scattering on the optical phonon modes of silicon

KW - molybdenum disulfide MoS${}_{2}$

KW - photoluminescence (PL)

KW - Raman scattering (RS)

UR - http://www.scopus.com/inward/record.url?scp=85126784179&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=48193928

UR - https://www.mendeley.com/catalogue/272e293b-9b82-345b-b8a4-7d09088dd1c1/

U2 - 10.3103/S8756699021050101

DO - 10.3103/S8756699021050101

M3 - Article

AN - SCOPUS:85126784179

VL - 57

SP - 532

EP - 538

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

M1 - 12

ER -

ID: 35771037