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Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2. / Islamov, Damir R.; Chernikova, A. G.; Kozodaev, M. G. et al.

In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012002, 15.08.2017.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Islamov, DR, Chernikova, AG, Kozodaev, MG, Markeev, AM, Perevalov, TV, Gritsenko, VA & Orlov, OM 2017, 'Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2', Journal of Physics: Conference Series, vol. 864, no. 1, 012002. https://doi.org/10.1088/1742-6596/864/1/012002

APA

Islamov, D. R., Chernikova, A. G., Kozodaev, M. G., Markeev, A. M., Perevalov, T. V., Gritsenko, V. A., & Orlov, O. M. (2017). Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2. Journal of Physics: Conference Series, 864(1), [012002]. https://doi.org/10.1088/1742-6596/864/1/012002

Vancouver

Islamov DR, Chernikova AG, Kozodaev MG, Markeev AM, Perevalov TV, Gritsenko VA et al. Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2. Journal of Physics: Conference Series. 2017 Aug 15;864(1):012002. doi: 10.1088/1742-6596/864/1/012002

Author

Islamov, Damir R. ; Chernikova, A. G. ; Kozodaev, M. G. et al. / Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2. In: Journal of Physics: Conference Series. 2017 ; Vol. 864, No. 1.

BibTeX

@article{c8373a61bc3f49f395083a613d7c9e55,
title = "Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2",
abstract = "We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of Hf0.5Zr0.5O2 are described by phonon-assisted tunnelling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mechanism does not depend on the structure. The thermal and optical trap energies 1.25 eV and 2.5 eV, respectively, in Hf0.5Zr0.5O2 were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunnelling between traps. We found that the trap density in ferroelectric Hf0.5Zr0.5O2 is slightly less than one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 is confirmed by ab initio simulation of electronic structure.",
author = "Islamov, {Damir R.} and Chernikova, {A. G.} and Kozodaev, {M. G.} and Markeev, {A. M.} and Perevalov, {T. V.} and Gritsenko, {V. A.} and Orlov, {O. M.}",
year = "2017",
month = aug,
day = "15",
doi = "10.1088/1742-6596/864/1/012002",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2

AU - Islamov, Damir R.

AU - Chernikova, A. G.

AU - Kozodaev, M. G.

AU - Markeev, A. M.

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Orlov, O. M.

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of Hf0.5Zr0.5O2 are described by phonon-assisted tunnelling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mechanism does not depend on the structure. The thermal and optical trap energies 1.25 eV and 2.5 eV, respectively, in Hf0.5Zr0.5O2 were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunnelling between traps. We found that the trap density in ferroelectric Hf0.5Zr0.5O2 is slightly less than one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 is confirmed by ab initio simulation of electronic structure.

AB - We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of Hf0.5Zr0.5O2 are described by phonon-assisted tunnelling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mechanism does not depend on the structure. The thermal and optical trap energies 1.25 eV and 2.5 eV, respectively, in Hf0.5Zr0.5O2 were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunnelling between traps. We found that the trap density in ferroelectric Hf0.5Zr0.5O2 is slightly less than one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 is confirmed by ab initio simulation of electronic structure.

UR - http://www.scopus.com/inward/record.url?scp=85028750736&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012002

DO - 10.1088/1742-6596/864/1/012002

M3 - Conference article

AN - SCOPUS:85028750736

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012002

ER -

ID: 9915593