Research output: Contribution to journal › Article › peer-review
Laser pulse shape dependence of poly-Si crystallization. / Prudnikov, Oleg N.; Shin, Sung Tae; Cheong, Byoung Ho.
In: AIP Advances, Vol. 7, No. 12, 125102, 01.12.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Laser pulse shape dependence of poly-Si crystallization
AU - Prudnikov, Oleg N.
AU - Shin, Sung Tae
AU - Cheong, Byoung Ho
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Poly-Si crystallization mechanism is examined by conducting numerical simulations, combining the thermal diffusion equation with a rigorous coupled wave analysis method. The ripples at the boundary of poly-Si grains are modeled as a grating surface structure. Under laser beam irradiation, the melting front profiles are accurately analyzed by including surface diffraction, polarization of the laser, and laser energy density. For two different lasers, XeCl excimer laser (λ = 308 nm) and Yb:YAG solid state laser (λ= 343 nm), the energy density range at which poly-Si grains are gradually ordered was determined. Furthermore, the energy density window of the Yb:YAG laser is found to be four times larger than that of XeCl laser. On the other hand, the Yb:YAG laser may produce amorphous-Si phase after completing the crystallization process. It is suggested that this amorphous-Si phase could be avoided, if a double pulse laser is used.
AB - Poly-Si crystallization mechanism is examined by conducting numerical simulations, combining the thermal diffusion equation with a rigorous coupled wave analysis method. The ripples at the boundary of poly-Si grains are modeled as a grating surface structure. Under laser beam irradiation, the melting front profiles are accurately analyzed by including surface diffraction, polarization of the laser, and laser energy density. For two different lasers, XeCl excimer laser (λ = 308 nm) and Yb:YAG solid state laser (λ= 343 nm), the energy density range at which poly-Si grains are gradually ordered was determined. Furthermore, the energy density window of the Yb:YAG laser is found to be four times larger than that of XeCl laser. On the other hand, the Yb:YAG laser may produce amorphous-Si phase after completing the crystallization process. It is suggested that this amorphous-Si phase could be avoided, if a double pulse laser is used.
KW - THIN-FILM TRANSISTORS
KW - AMORPHOUS-SILICON
UR - http://www.scopus.com/inward/record.url?scp=85037681948&partnerID=8YFLogxK
U2 - 10.1063/1.4998221
DO - 10.1063/1.4998221
M3 - Article
AN - SCOPUS:85037681948
VL - 7
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 12
M1 - 125102
ER -
ID: 9032235