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Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures. / Tolstoguzov, A. B.; Drozdov, M. N.; Ieshkin, A. E. et al.

In: JETP Letters, Vol. 111, No. 8, 01.04.2020, p. 467-471.

Research output: Contribution to journal › Article › peer-review

Harvard

Tolstoguzov, AB, Drozdov, MN, Ieshkin, AE, Tatarintsev, AA, Myakon’kikh, AV, Belykh, SF, Korobeishchikov, NG, Pelenovich, VO & Fu, DJ 2020, 'Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures', JETP Letters, vol. 111, no. 8, pp. 467-471. https://doi.org/10.1134/S0021364020080123

APA

Tolstoguzov, A. B., Drozdov, M. N., Ieshkin, A. E., Tatarintsev, A. A., Myakon’kikh, A. V., Belykh, S. F., Korobeishchikov, N. G., Pelenovich, V. O., & Fu, D. J. (2020). Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures. JETP Letters, 111(8), 467-471. https://doi.org/10.1134/S0021364020080123

Vancouver

Tolstoguzov AB, Drozdov MN, Ieshkin AE, Tatarintsev AA, Myakon’kikh AV, Belykh SF et al. Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures. JETP Letters. 2020 Apr 1;111(8):467-471. doi: 10.1134/S0021364020080123

Author

Tolstoguzov, A. B. ; Drozdov, M. N. ; Ieshkin, A. E. et al. / Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures. In: JETP Letters. 2020 ; Vol. 111, No. 8. pp. 467-471.

BibTeX

@article{790a23ba8a4341549bbeb497b6d356ec,
title = "Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures",
abstract = "The finite-size effect increasing the emission of polyatomic cluster ions from silicon nanostructures as compared to a macroscopic sample has been studied. This study has been performed for the first time in periodic structures with 10- and 50-nm-wide combs fabricated by electron beam lithography with subsequent plasma chemical etching. It has been shown that the yield of polyatomic cluster ions from structures with the comb whose effective width is comparable with the projective range of a bombarding bismuth ion in silicon is much higher than the yield from macroscopic samples, e.g., by more than a factor of 5 for 28Si10− (m/z = 280). This effect has been explained by a partial limitation of dissipation channels for the energy released by the bombarding ion in the volume of the structure, which stimulates a more efficient development of nonlinear collision cascades in such a volume and, as a result, increases the yield of polyatomic cluster ions.",
author = "Tolstoguzov, {A. B.} and Drozdov, {M. N.} and Ieshkin, {A. E.} and Tatarintsev, {A. A.} and Myakon{\textquoteright}kikh, {A. V.} and Belykh, {S. F.} and Korobeishchikov, {N. G.} and Pelenovich, {V. O.} and Fu, {D. J.}",
year = "2020",
month = apr,
day = "1",
doi = "10.1134/S0021364020080123",
language = "English",
volume = "111",
pages = "467--471",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "8",

}

RIS

TY - JOUR

T1 - Influence of the Finite-Size Effect on the Cluster Ion Emission of Silicon Nanostructures

AU - Tolstoguzov, A. B.

AU - Drozdov, M. N.

AU - Ieshkin, A. E.

AU - Tatarintsev, A. A.

AU - Myakon’kikh, A. V.

AU - Belykh, S. F.

AU - Korobeishchikov, N. G.

AU - Pelenovich, V. O.

AU - Fu, D. J.

PY - 2020/4/1

Y1 - 2020/4/1

N2 - The finite-size effect increasing the emission of polyatomic cluster ions from silicon nanostructures as compared to a macroscopic sample has been studied. This study has been performed for the first time in periodic structures with 10- and 50-nm-wide combs fabricated by electron beam lithography with subsequent plasma chemical etching. It has been shown that the yield of polyatomic cluster ions from structures with the comb whose effective width is comparable with the projective range of a bombarding bismuth ion in silicon is much higher than the yield from macroscopic samples, e.g., by more than a factor of 5 for 28Si10− (m/z = 280). This effect has been explained by a partial limitation of dissipation channels for the energy released by the bombarding ion in the volume of the structure, which stimulates a more efficient development of nonlinear collision cascades in such a volume and, as a result, increases the yield of polyatomic cluster ions.

AB - The finite-size effect increasing the emission of polyatomic cluster ions from silicon nanostructures as compared to a macroscopic sample has been studied. This study has been performed for the first time in periodic structures with 10- and 50-nm-wide combs fabricated by electron beam lithography with subsequent plasma chemical etching. It has been shown that the yield of polyatomic cluster ions from structures with the comb whose effective width is comparable with the projective range of a bombarding bismuth ion in silicon is much higher than the yield from macroscopic samples, e.g., by more than a factor of 5 for 28Si10− (m/z = 280). This effect has been explained by a partial limitation of dissipation channels for the energy released by the bombarding ion in the volume of the structure, which stimulates a more efficient development of nonlinear collision cascades in such a volume and, as a result, increases the yield of polyatomic cluster ions.

UR - http://www.scopus.com/inward/record.url?scp=85087525447&partnerID=8YFLogxK

U2 - 10.1134/S0021364020080123

DO - 10.1134/S0021364020080123

M3 - Article

AN - SCOPUS:85087525447

VL - 111

SP - 467

EP - 471

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 8

ER -

ID: 24720814