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InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux. / Kolosovsky, Danil; Dmitriev, Dmitry; Gavrilova, Tatiana et al.
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. p. 17-21 9507627 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Harvard
Kolosovsky, D, Dmitriev, D, Gavrilova, T, Toropov, A, Kozhukhov, A & Zhuravlev, K 2021,
InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux. in
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings., 9507627, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2021-June, IEEE Computer Society, pp. 17-21, 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021, Aya, Altai Region, Russian Federation,
30.06.2021.
https://doi.org/10.1109/EDM52169.2021.9507627APA
Kolosovsky, D., Dmitriev, D., Gavrilova, T., Toropov, A., Kozhukhov, A., & Zhuravlev, K. (2021).
InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux. In
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings (pp. 17-21). [9507627] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June). IEEE Computer Society.
https://doi.org/10.1109/EDM52169.2021.9507627Vancouver
Kolosovsky D, Dmitriev D, Gavrilova T, Toropov A, Kozhukhov A, Zhuravlev K.
InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux. In 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society. 2021. p. 17-21. 9507627. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM52169.2021.9507627
Author
BibTeX
@inproceedings{990702395ccd4be18f72432986ad5e3f,
title = "InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux",
abstract = "The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [1 1 0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.",
keywords = "annealing, indium arsenide, indium phosphide, nucleation, phosphorus",
author = "Danil Kolosovsky and Dmitry Dmitriev and Tatiana Gavrilova and Alexander Toropov and Anton Kozhukhov and Konstantin Zhuravlev",
note = "Funding Information: The research was funded by RFBR and number 20-42-540009. Publisher Copyright: {\textcopyright} 2021 IEEE.; 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 ; Conference date: 30-06-2021 Through 04-07-2021",
year = "2021",
month = jun,
day = "30",
doi = "10.1109/EDM52169.2021.9507627",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "17--21",
booktitle = "2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings",
address = "United States",
}
RIS
TY - GEN
T1 - InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux
AU - Kolosovsky, Danil
AU - Dmitriev, Dmitry
AU - Gavrilova, Tatiana
AU - Toropov, Alexander
AU - Kozhukhov, Anton
AU - Zhuravlev, Konstantin
N1 - Funding Information:
The research was funded by RFBR and number 20-42-540009.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/30
Y1 - 2021/6/30
N2 - The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [1 1 0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.
AB - The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [1 1 0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.
KW - annealing
KW - indium arsenide
KW - indium phosphide
KW - nucleation
KW - phosphorus
UR - http://www.scopus.com/inward/record.url?scp=85113527017&partnerID=8YFLogxK
U2 - 10.1109/EDM52169.2021.9507627
DO - 10.1109/EDM52169.2021.9507627
M3 - Conference contribution
AN - SCOPUS:85113527017
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 17
EP - 21
BT - 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings
PB - IEEE Computer Society
T2 - 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021
Y2 - 30 June 2021 through 4 July 2021
ER -
