Standard

HPHT growth and characterization of diamond from a copper-carbon system. / Kupriyanov, Igor N.; Khokhryakov, Alexander F.; Borzdov, Yuri M. et al.

In: Diamond and Related Materials, Vol. 69, 01.10.2016, p. 198-206.

Research output: Contribution to journal › Article › peer-review

Harvard

Kupriyanov, IN, Khokhryakov, AF, Borzdov, YM & Palyanov, YN 2016, 'HPHT growth and characterization of diamond from a copper-carbon system', Diamond and Related Materials, vol. 69, pp. 198-206. https://doi.org/10.1016/j.diamond.2016.09.009

APA

Kupriyanov, I. N., Khokhryakov, A. F., Borzdov, Y. M., & Palyanov, Y. N. (2016). HPHT growth and characterization of diamond from a copper-carbon system. Diamond and Related Materials, 69, 198-206. https://doi.org/10.1016/j.diamond.2016.09.009

Vancouver

Kupriyanov IN, Khokhryakov AF, Borzdov YM, Palyanov YN. HPHT growth and characterization of diamond from a copper-carbon system. Diamond and Related Materials. 2016 Oct 1;69:198-206. doi: 10.1016/j.diamond.2016.09.009

Author

Kupriyanov, Igor N. ; Khokhryakov, Alexander F. ; Borzdov, Yuri M. et al. / HPHT growth and characterization of diamond from a copper-carbon system. In: Diamond and Related Materials. 2016 ; Vol. 69. pp. 198-206.

BibTeX

@article{670d461d0f9d444bbaa1895bcdfed035,
title = "HPHT growth and characterization of diamond from a copper-carbon system",
abstract = "Diamond crystallization in the Cu-C system is studied at high pressure high temperature conditions of 7.0 GPa and 1500–1800 °C. The minimum temperature of diamond synthesis by spontaneous nucleation is found to be 1800 °C. Diamond layers of optical quality are grown on the seed crystals via the chemical-potential difference method. From the infrared absorption measurements it is found that the diamond layers grown on the (100) faces of the seed crystals contain nitrogen impurities in the form of A centers with concentration from 700 to 1100 ppm and show strong hydrogen-related absorption peak at 3107 cm− 1. A number of specific optical centers are found in photoluminescence spectra recorded for diamond layers grown on both (100) and (111) faces of the seed crystals. The newly observed 1.748 eV center is tentatively assigned to defects involving Cu impurities. The 1.787 eV center is suggested to appear preferentially in diamonds with high contents of nitrogen and hydrogen impurities.",
keywords = "Defect characterization, High pressure high temperature (HPHT), Impurities, Optical properties, Solvent-catalysts, Synthetic diamond",
author = "Kupriyanov, {Igor N.} and Khokhryakov, {Alexander F.} and Borzdov, {Yuri M.} and Palyanov, {Yuri N.}",
year = "2016",
month = oct,
day = "1",
doi = "10.1016/j.diamond.2016.09.009",
language = "English",
volume = "69",
pages = "198--206",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - HPHT growth and characterization of diamond from a copper-carbon system

AU - Kupriyanov, Igor N.

AU - Khokhryakov, Alexander F.

AU - Borzdov, Yuri M.

AU - Palyanov, Yuri N.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Diamond crystallization in the Cu-C system is studied at high pressure high temperature conditions of 7.0 GPa and 1500–1800 °C. The minimum temperature of diamond synthesis by spontaneous nucleation is found to be 1800 °C. Diamond layers of optical quality are grown on the seed crystals via the chemical-potential difference method. From the infrared absorption measurements it is found that the diamond layers grown on the (100) faces of the seed crystals contain nitrogen impurities in the form of A centers with concentration from 700 to 1100 ppm and show strong hydrogen-related absorption peak at 3107 cm− 1. A number of specific optical centers are found in photoluminescence spectra recorded for diamond layers grown on both (100) and (111) faces of the seed crystals. The newly observed 1.748 eV center is tentatively assigned to defects involving Cu impurities. The 1.787 eV center is suggested to appear preferentially in diamonds with high contents of nitrogen and hydrogen impurities.

AB - Diamond crystallization in the Cu-C system is studied at high pressure high temperature conditions of 7.0 GPa and 1500–1800 °C. The minimum temperature of diamond synthesis by spontaneous nucleation is found to be 1800 °C. Diamond layers of optical quality are grown on the seed crystals via the chemical-potential difference method. From the infrared absorption measurements it is found that the diamond layers grown on the (100) faces of the seed crystals contain nitrogen impurities in the form of A centers with concentration from 700 to 1100 ppm and show strong hydrogen-related absorption peak at 3107 cm− 1. A number of specific optical centers are found in photoluminescence spectra recorded for diamond layers grown on both (100) and (111) faces of the seed crystals. The newly observed 1.748 eV center is tentatively assigned to defects involving Cu impurities. The 1.787 eV center is suggested to appear preferentially in diamonds with high contents of nitrogen and hydrogen impurities.

KW - Defect characterization

KW - High pressure high temperature (HPHT)

KW - Impurities

KW - Optical properties

KW - Solvent-catalysts

KW - Synthetic diamond

UR - http://www.scopus.com/inward/record.url?scp=84987973396&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2016.09.009

DO - 10.1016/j.diamond.2016.09.009

M3 - Article

AN - SCOPUS:84987973396

VL - 69

SP - 198

EP - 206

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

ID: 25724455