High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence

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High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence. / Yen, Te Jui; Chin, Albert; Gritsenko, Vladimir.

In: Scientific Reports, Vol. 10, No. 1, 2807, 18.02.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Yen, TJ, Chin, A & Gritsenko, V 2020, 'High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence', Scientific Reports, vol. 10, no. 1, 2807. https://doi.org/10.1038/s41598-020-59838-y

APA

Yen, T. J., Chin, A., & Gritsenko, V. (2020). High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence. Scientific Reports, 10(1), [2807]. https://doi.org/10.1038/s41598-020-59838-y

Vancouver

Yen TJ, Chin A, Gritsenko V. High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence. Scientific Reports. 2020 Feb 18;10(1):2807. doi: 10.1038/s41598-020-59838-y

Author

Yen, Te Jui ; Chin, Albert ; Gritsenko, Vladimir. / High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence. In: Scientific Reports. 2020 ; Vol. 10, No. 1.

BibTeX

@article{3ed87760ed534c97ac1c563bd5db57cc,

title = "High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence",

abstract = "All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiNx RRAM device developed using PVD has a large resistance window that is larger than 104 and exhibits good endurance to 105 cycles under switching pulses of 1 μs and a retention time of 104 s at 85 °C. Moreover, the SiNx RRAM device developed using PVD had tighter device-to-device distribution of set and reset voltages than those developed using PECVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxide-semiconductor technology to realise electronic neurons. The high performance of the SiNx RRAM device developed using PVD is attributed to the abundant defects in the PVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current–voltage characteristics.",

keywords = "POOLE-FRENKEL, RRAM, DEVICES",

author = "Yen, {Te Jui} and Albert Chin and Vladimir Gritsenko",

year = "2020",

month = feb,

day = "18",

doi = "10.1038/s41598-020-59838-y",

language = "English",

volume = "10",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

number = "1",

}

RIS

TY - JOUR

T1 - High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence

AU - Yen, Te Jui

AU - Chin, Albert

AU - Gritsenko, Vladimir

PY - 2020/2/18

Y1 - 2020/2/18

N2 - All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiNx RRAM device developed using PVD has a large resistance window that is larger than 104 and exhibits good endurance to 105 cycles under switching pulses of 1 μs and a retention time of 104 s at 85 °C. Moreover, the SiNx RRAM device developed using PVD had tighter device-to-device distribution of set and reset voltages than those developed using PECVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxide-semiconductor technology to realise electronic neurons. The high performance of the SiNx RRAM device developed using PVD is attributed to the abundant defects in the PVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current–voltage characteristics.

AB - All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiNx RRAM device developed using PVD has a large resistance window that is larger than 104 and exhibits good endurance to 105 cycles under switching pulses of 1 μs and a retention time of 104 s at 85 °C. Moreover, the SiNx RRAM device developed using PVD had tighter device-to-device distribution of set and reset voltages than those developed using PECVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxide-semiconductor technology to realise electronic neurons. The high performance of the SiNx RRAM device developed using PVD is attributed to the abundant defects in the PVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current–voltage characteristics.

KW - POOLE-FRENKEL

KW - RRAM

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=85079666920&partnerID=8YFLogxK

U2 - 10.1038/s41598-020-59838-y

DO - 10.1038/s41598-020-59838-y

M3 - Article

C2 - 32071358

AN - SCOPUS:85079666920

VL - 10

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 2807

ER -

ID: 23595493