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High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic. / Chin, Albert; Yen, Te Jui; Chen, You Da et al.

In: Digest of Technical Papers - SID International Symposium, Vol. 52, No. S1, 2021, p. 292-294.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Chin, A, Yen, TJ, Chen, YD, Shih, CW & Gritsenko, V 2021, 'High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic', Digest of Technical Papers - SID International Symposium, vol. 52, no. S1, pp. 292-294. https://doi.org/10.1002/sdtp.14466

APA

Chin, A., Yen, T. J., Chen, Y. D., Shih, C. W., & Gritsenko, V. (2021). High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic. Digest of Technical Papers - SID International Symposium, 52(S1), 292-294. https://doi.org/10.1002/sdtp.14466

Vancouver

Chin A, Yen TJ, Chen YD, Shih CW, Gritsenko V. High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic. Digest of Technical Papers - SID International Symposium. 2021;52(S1):292-294. doi: 10.1002/sdtp.14466

Author

Chin, Albert ; Yen, Te Jui ; Chen, You Da et al. / High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic. In: Digest of Technical Papers - SID International Symposium. 2021 ; Vol. 52, No. S1. pp. 292-294.

BibTeX

@article{41bc08ec6b7c4b969a2a7f206f809045,
title = "High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic",
abstract = "One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.",
keywords = "Brain-mimicking integrated circuit, Complementary TFTs, High mobility, N-type TFT, P-type TFT, SnO pTFT, System-on-panel, ZnO nTFT",
author = "Albert Chin and Yen, {Te Jui} and Chen, {You Da} and Shih, {Cheng Wei} and Vladimir Gritsenko",
note = "Funding Information: Prof. Vladimir Gritsenko would like to thank the funding support from Russian Science Foundation (project no. 18-49-08001); Albert Chin, Te Jui Yen, You Da Chen, and Cheng Wei Shih would like to acknowledge the support from Ministry of Science and Technology of Taiwan (project no. 107-2923-E-009-001-MY3). Publisher Copyright: {\textcopyright} 2021, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2020 ; Conference date: 18-10-2020 Through 21-10-2020",
year = "2021",
doi = "10.1002/sdtp.14466",
language = "English",
volume = "52",
pages = "292--294",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",
publisher = "National Symposium on Information Display",
number = "S1",

}

RIS

TY - JOUR

T1 - High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic

AU - Chin, Albert

AU - Yen, Te Jui

AU - Chen, You Da

AU - Shih, Cheng Wei

AU - Gritsenko, Vladimir

N1 - Funding Information: Prof. Vladimir Gritsenko would like to thank the funding support from Russian Science Foundation (project no. 18-49-08001); Albert Chin, Te Jui Yen, You Da Chen, and Cheng Wei Shih would like to acknowledge the support from Ministry of Science and Technology of Taiwan (project no. 107-2923-E-009-001-MY3). Publisher Copyright: © 2021, John Wiley and Sons Inc. All rights reserved.

PY - 2021

Y1 - 2021

N2 - One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

AB - One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

KW - Brain-mimicking integrated circuit

KW - Complementary TFTs

KW - High mobility

KW - N-type TFT

KW - P-type TFT

KW - SnO pTFT

KW - System-on-panel

KW - ZnO nTFT

UR - http://www.scopus.com/inward/record.url?scp=85114517156&partnerID=8YFLogxK

U2 - 10.1002/sdtp.14466

DO - 10.1002/sdtp.14466

M3 - Conference article

AN - SCOPUS:85114517156

VL - 52

SP - 292

EP - 294

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - S1

T2 - International Conference on Display Technology, ICDT 2020

Y2 - 18 October 2020 through 21 October 2020

ER -

ID: 34208858