Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

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Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates. / Abramkin, D. S.; Petrushkov, M. O.; Putyato, M. A. et al.

In: Semiconductors, Vol. 52, No. 11, 01.11.2018, p. 1484-1490.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{56177393670748549cee3dc62b02e1a0,

title = "Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates",

abstract = "Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.",

keywords = "ATOMIC-HYDROGEN, SI, EPITAXY, PHOTOLUMINESCENCE, PERFECTION, DEFECTS, LAYERS",

author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Putyato, {M. A.} and Semyagin, {B. R.} and Shamirzaev, {T. S.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = nov,

day = "1",

doi = "10.1134/S1063782618110039",

language = "English",

volume = "52",

pages = "1484--1490",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "11",

}

RIS

TY - JOUR

T1 - Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Shamirzaev, T. S.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

AB - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

KW - ATOMIC-HYDROGEN

KW - SI

KW - EPITAXY

KW - PHOTOLUMINESCENCE

KW - PERFECTION

KW - DEFECTS

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85055260685&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110039

DO - 10.1134/S1063782618110039

M3 - Article

AN - SCOPUS:85055260685

VL - 52

SP - 1484

EP - 1490

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 17248310