Hafnia and alumina stacks as UTBOXs in silicon-on insulator

Standard

Hafnia and alumina stacks as UTBOXs in silicon-on insulator. / Popov, V. P.; Antonov, V. A.; Gutakovskiy, A. K. et al.

In: Solid-State Electronics, Vol. 168, 107734, 06.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Popov, VP, Antonov, VA, Gutakovskiy, AK, Tyschenko, IE, Vdovin, VI, Miakonkikh, AV & Rudenko, KV 2020, 'Hafnia and alumina stacks as UTBOXs in silicon-on insulator', Solid-State Electronics, vol. 168, 107734. https://doi.org/10.1016/j.sse.2019.107734

APA

Popov, V. P., Antonov, V. A., Gutakovskiy, A. K., Tyschenko, I. E., Vdovin, V. I., Miakonkikh, A. V., & Rudenko, K. V. (2020). Hafnia and alumina stacks as UTBOXs in silicon-on insulator. Solid-State Electronics, 168, [107734]. https://doi.org/10.1016/j.sse.2019.107734

Vancouver

Popov VP, Antonov VA, Gutakovskiy AK, Tyschenko IE, Vdovin VI, Miakonkikh AV et al. Hafnia and alumina stacks as UTBOXs in silicon-on insulator. Solid-State Electronics. 2020 Jun;168:107734. doi: 10.1016/j.sse.2019.107734

Author

Popov, V. P. ; Antonov, V. A. ; Gutakovskiy, A. K. et al. / Hafnia and alumina stacks as UTBOXs in silicon-on insulator. In: Solid-State Electronics. 2020 ; Vol. 168.

BibTeX

@article{b1750eaad26742abb82356cb3b2a1871,

title = "Hafnia and alumina stacks as UTBOXs in silicon-on insulator",

abstract = "PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.",

keywords = "Ferroelectric phase, Hafnia and alumina high-k BOX, Interface polarization, Interface states, SOI pseudo-MOSFETs, SOS",

author = "Popov, {V. P.} and Antonov, {V. A.} and Gutakovskiy, {A. K.} and Tyschenko, {I. E.} and Vdovin, {V. I.} and Miakonkikh, {A. V.} and Rudenko, {K. V.}",

year = "2020",

month = jun,

doi = "10.1016/j.sse.2019.107734",

language = "English",

volume = "168",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Hafnia and alumina stacks as UTBOXs in silicon-on insulator

AU - Popov, V. P.

AU - Antonov, V. A.

AU - Gutakovskiy, A. K.

AU - Tyschenko, I. E.

AU - Vdovin, V. I.

AU - Miakonkikh, A. V.

AU - Rudenko, K. V.

PY - 2020/6

Y1 - 2020/6

N2 - PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

AB - PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

KW - Ferroelectric phase

KW - Hafnia and alumina high-k BOX

KW - Interface polarization

KW - Interface states

KW - SOI pseudo-MOSFETs

KW - SOS

UR - http://www.scopus.com/inward/record.url?scp=85076587576&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2019.107734

DO - 10.1016/j.sse.2019.107734

M3 - Article

AN - SCOPUS:85076587576

VL - 168

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

M1 - 107734

ER -

ID: 23093130