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Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method. / Gentselev, A. N.; Dul’tsev, F. N.; Kondrat’ev, V. I. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 54, No. 2, 01.03.2018, p. 127-134.

Research output: Contribution to journal › Article › peer-review

Harvard

Gentselev, AN, Dul’tsev, FN, Kondrat’ev, VI & Lemzyakov, AG 2018, 'Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method', Optoelectronics, Instrumentation and Data Processing, vol. 54, no. 2, pp. 127-134. https://doi.org/10.3103/S8756699018020024

APA

Gentselev, A. N., Dul’tsev, F. N., Kondrat’ev, V. I., & Lemzyakov, A. G. (2018). Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method. Optoelectronics, Instrumentation and Data Processing, 54(2), 127-134. https://doi.org/10.3103/S8756699018020024

Vancouver

Gentselev AN, Dul’tsev FN, Kondrat’ev VI, Lemzyakov AG. Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method. Optoelectronics, Instrumentation and Data Processing. 2018 Mar 1;54(2):127-134. doi: 10.3103/S8756699018020024

Author

Gentselev, A. N. ; Dul’tsev, F. N. ; Kondrat’ev, V. I. et al. / Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method. In: Optoelectronics, Instrumentation and Data Processing. 2018 ; Vol. 54, No. 2. pp. 127-134.

BibTeX

@article{e3ef5823363d474889260798d099e274,
title = "Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method",
abstract = "A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.",
keywords = "contact photolithography device, deep contact photolithography, LIGA masks, stamp or cast mould microrelief, SU-8 resist",
author = "Gentselev, {A. N.} and Dul{\textquoteright}tsev, {F. N.} and Kondrat{\textquoteright}ev, {V. I.} and Lemzyakov, {A. G.}",
year = "2018",
month = mar,
day = "1",
doi = "10.3103/S8756699018020024",
language = "English",
volume = "54",
pages = "127--134",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method

AU - Gentselev, A. N.

AU - Dul’tsev, F. N.

AU - Kondrat’ev, V. I.

AU - Lemzyakov, A. G.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.

AB - A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.

KW - contact photolithography device

KW - deep contact photolithography

KW - LIGA masks

KW - stamp or cast mould microrelief

KW - SU-8 resist

UR - http://www.scopus.com/inward/record.url?scp=85048306676&partnerID=8YFLogxK

U2 - 10.3103/S8756699018020024

DO - 10.3103/S8756699018020024

M3 - Article

AN - SCOPUS:85048306676

VL - 54

SP - 127

EP - 134

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 2

ER -

ID: 13925113